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Vishay Silicon Junction Switching Diode 1 A 2-Pin 400 V Surface Mount DO-213AB EGL41G-E3/96
Specifications
| Country of Origin | Taiwan |
|---|---|
| Diameter | 2.67mm |
| Brand | Vishay |
| Height | 2.67mm |
| Length | 5.2mm |
| Model | EGL41G-E3/96 |
| Width | 2.67mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-213AB |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 30A |
| Maximum Forward Voltage Vf | 1.25V |
| Peak Reverse Recovery Time trr | 50ns |
| Maximum Forward Current If | 1A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 400V |
Key Features
- Handles a maximum forward current of 1 ampere with reliable silicon junction technology.
- Surface mount through 2-pin DO-213AB package optimized for compact electronic designs.
- Peak reverse repetitive voltage rating of 400 volts ensures robust performance.
- Fast peak reverse recovery time of 50 nanoseconds suitable for high-frequency switching.
- Wide operating temperature range from -65°C to 175°C for industrial robustness.
- Maximum forward voltage drop of 1.25 volts reduces power loss in circuits.
- Designed for ultrafast recovery applications like SMPS, inverters, and freewheeling diodes.
- Manufactured in Taiwan, Province Of China, ensuring quality semiconductor standards.
Product Description
Vishay EGL41G-E3/96 is a silicon junction switching diode designed for high-frequency and ultrafast recovery applications. Housed in a DO-213AB 2-pin surface mount package, it supports a continuous maximum forward current of 1 A and a peak reverse voltage of 400 V. The diode features a fast peak reverse recovery time of 50 ns, making it suitable for switched mode power supplies (SMPS), inverters, and freewheeling diode circuits.
This diode operates reliably across a temperature range from -65°C to 175°C, providing industrial-grade durability. The maximum forward voltage drop of 1.25 V ensures efficient power management in electrical circuits. Its compact dimensions of 5.2 mm length and 2.67 mm diameter support miniaturized electronic designs.
The diode's ultrafast recovery characteristics contribute to improved efficiency in power conversion and switching applications. Maximum forward current of 1 A with silicon junction configuration. 2-pin DO-213AB surface mount package ensuring easy PCB integration.
Peak reverse voltage of 400 V for robust blocking capability. Fast recovery time of 50 ns for high frequency switching. Temperature rating from -65°C to 175°C for harsh environments. Compact physical dimensions with 2.67 mm diameter and width.
Maximum forward voltage of 1.25 V for low conduction losses. Ideal for SMPS, inverter, and freewheeling diode applications. Made in Taiwan, Province Of China with consistent semiconductor quality.
This diode is a key component for electronic manufacturers focusing on power electronics and switching diode needs. Explore Vishay semiconductor products category at EnvMart to find compatible components and detailed technical resources.
Explore more products in our Switching Diodes category.
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Frequently Asked Questions
The maximum forward current of the Vishay EGL41G-E3/96 is 1 ampere.
This model has a peak reverse repetitive voltage rating of 400 volts.
It features a fast peak reverse recovery time of 50 nanoseconds, making it suitable for high-frequency applications.
The diode operates reliably across a wide temperature range from -65°C to 175°C.
The maximum forward voltage drop is 1.25 volts, which helps reduce power loss in circuits.
This diode has a length of 5.2 mm and a diameter of 2.67 mm, making it suitable for compact electronic designs.
The diode is housed in a DO-213AB 2-pin surface mount package.
It is designed for ultrafast recovery applications, including switched mode power supplies (SMPS), inverters, and freewheeling diodes.
The EGL41G-E3/96 is manufactured in Taiwan, Province Of China.
This model has a pin count of 2.
The peak non-repetitive forward surge current rating is 30 amperes.
The diode configuration is single, suitable for various electronic applications.
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