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DiodesZetex Switching Diode Single 1 A 1000 V SMB Surface Mount 2-Pin RS1MB-13-F
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 2.3mm |
| Length | 4.57mm |
| Model | RS1MB-13-F |
| Width | 3.94mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SMB |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 30A |
| Maximum Forward Voltage Vf | 1.3V |
| Peak Reverse Recovery Time trr | 500ns |
| Maximum Forward Current If | 1A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 1000V |
Key Features
- This diode supports a maximum forward voltage of 1.3 V, ensuring efficient switching performance.
- The device features a fast peak reverse recovery time of 500 ns for rapid switching applications.
- It is designed for surface mounting with a compact 2-pin SMB package.
- Operating temperature ranges from -65°C to 150°C, suitable for various industrial environments.
- Peak surge forward current capability is up to 30 A, enhancing robustness during transient conditions.
- The diode measures 4.57 mm in length, 3.94 mm in width, and 2.3 mm in height, facilitating compact PCB layouts.
Product Description
The DiodesZetex RS1MB-13-F Switching Diode is a precision silicon junction diode engineered for high reliability and efficiency in electronic circuits. Featuring a maximum forward current of 1 A and a peak reverse voltage rating of 1000 V, it is ideal for use in power switching, rectification, and signal modulation applications within electronic, industrial automation, and telecommunications equipment.
This diode utilizes a surface mount SMB package design that allows for compact integration on printed circuit boards, saving valuable space. The low forward voltage drop of 1.3 V minimizes power dissipation in high frequency switching tasks, ensuring energy-efficient operation.
The device supports extreme operating temperature ranges from -65°C to 150°C, making it robust for demanding environmental conditions often found in industrial and automotive sectors. It also withstands peak surge forward currents up to 30 A, offering protection against transient spikes and enhancing the durability of circuit protection systems.
The diode’s fast peak reverse recovery time of 500 ns allows it to operate effectively in high-speed switching circuits, reducing switching losses and electrical noise. Its physical dimensions of 4.57 mm length, 3.94 mm width, and 2.3 mm height provide a compact and versatile footprint for diverse electronic applications.
This diode is a suitable component for electronic controllers, power supplies, and switch-mode power supplies in industrial and consumer electronics. Its small SMB package facilitates easy PCB mounting and automated assembly processes.
Applications include power management, signal rectification, and protection circuits requiring reliable switching performance. This diode is designed to meet the requirements of modern electronic manufacturing with no automotive certification.
Use cases span industrial electronics, automation systems, instrumentation, and general electronic design. Explore the Electronics & Electricals catalog at EnvMart to discover more semiconductor and diode components suitable for various industrial and laboratory needs.
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Frequently Asked Questions
The maximum forward current rating of this model is 1 A.
This diode has a peak reverse voltage rating of 1000 V.
The maximum forward voltage drop is 1.3 V, which helps in minimizing power dissipation.
The diode measures 4.57 mm in length, 3.94 mm in width, and 2.3 mm in height.
It can withstand a peak surge forward current of up to 30 A.
The operating temperature range is from -65°C to 150°C.
The peak reverse recovery time is 500 ns, allowing for rapid switching applications.
This diode is designed for surface mounting with a compact 2-pin SMB package.
It is suitable for power switching, rectification, and signal modulation applications in various electronic circuits.
This model features a single diode configuration.
The sub-type of this diode is a silicon junction diode.
The country of origin for this diode is India.
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