Infineon HEXFET N-Channel MOSFET 270A Continuous Drain Current 60V Drain-Source Voltage TO-220 IRLB3036PBF

Infineon IRLB3036PBF HEXFET N-Channel MOSFET is a high-performance power-switching transistor designed for industrial and commercial applications requiring high continuous drain current and efficient low-loss switching. This device can continuously conduct a drain current of 270 amperes and withstands a drain-source voltage of up to 60 volts. It is housed in a TO-220 through-hole package that facilitates direct heatsink attachment to optimize thermal management.

The MOSFET features an exceptionally low on-resistance of 2 milliohms, which minimizes conduction losses during operation, maximizing efficiency. It supports a maximum power dissipation of 380 watts, enabling it to handle demanding power switching tasks.

Designed as an enhancement-mode device with N-channel conduction, it operates safely within a gate-source voltage limit of ±16 volts to protect the gate oxide layer. The typical gate charge is 91 nanocoulombs, ensuring stable and predictable switching performance under varying load conditions.

Its wide operating temperature range from -55°C to 175°C allows deployment in harsh environmental and elevated junction temperature scenarios, typical in industrial, motor drive, and power supply applications.

The device exhibits a forward voltage of approximately 1.3 volts during body diode conduction, relevant to switching loss considerations in synchronous rectification and freewheeling operations.

Typical industrial applications include motor control stages in industrial equipment, power supply units, DC-DC converters, battery management systems for high-current switching, and inverter output stages in medium-voltage systems.

Very low on-resistance of 2 milliohms for reduced conduction losses. High continuous drain current of 270 amperes to manage heavy loads. Maximum power dissipation rating of 380 watts for high-power switching. Wide thermal operating range from -55°C to 175°C.

TO-220 package supports through-hole mounting and efficient heat dissipation. Typical gate charge of 91 nanocoulombs for predictable switching. Gate-source voltage limits of ±16 volts ensure device protection. Forward voltage of 1.3 volts during body diode conduction affects loss calculations.

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