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Infineon DirectFET HEXFET N-Channel MOSFET 60 V 86 A Enhancement Mode Surface Mount 4-Pin MN Package IRF6648TRPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 500μm
Length 6.35mm
Model IRF6648TRPBF
Width 5.05mm
Mount Type Surface
Series DirectFET, HEXFET
Maximum Operating Temperature 150°C
Package Type MN
Minimum Operating Temperature -40°C
Pin Count 4
Channel Type N
Maximum Continuous Drain Current Id 86A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 7mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 89W
Typical Gate Charge Qg @ Vgs 36nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.3V

Key Features

  • DirectFET package technology ensures extremely low package resistance for reduced conduction losses.
  • Surface mount 4-pin MN package allows for compact PCB footprint and efficient dual-sided cooling.
  • Enhancement mode operation with maximum gate-source voltage range of -20 to +20 V.
  • Maximum power dissipation rating of 89 W supports high power density designs.
  • Operating temperature range from -40°C to 150°C accommodates demanding industrial environments.
  • Typical gate charge of 36 nC enables fast switching with minimal gate drive loss.
  • Low maximum drain-source resistance of 7 milliohms enhances efficiency in power conversion circuits.
  • Forward voltage of 1.3 V contributes to low conduction losses during operation.

Product Description

Infineon IRF6648TRPBF is a high-efficiency DirectFET HEXFET N-Channel MOSFET designed for advanced power switching applications. It features a surface-mount 4-pin MN package that reduces energy losses and supports high power density through efficient dual-sided cooling.

This MOSFET provides a maximum continuous drain current of 86 A and a maximum drain-source voltage of 60 V, suitable for demanding industrial, automotive (non-qualified), and commercial electronics applications. The device operates in enhancement mode with a maximum gate-source voltage of -20 V to +20 V, making it highly versatile in various control circuits.

The compact dimensions of 6.35 mm length, 5.05 mm width, and 500 µm height contribute to its low profile (0.7 mm) for space-constrained PCB designs while allowing for improved thermal dissipation and reliability. The low maximum drain-source resistance of 7 milliohms and forward voltage of 1.3 V ensure high efficiency in power conversion and switching circuits.

The device supports a maximum power dissipation of 89 W and can operate safely from -40°C up to 150°C, offering durability in harsh thermal environments typically encountered in industrial and HVAC systems.

Typical gate charge of 36 nC results in fast switching capabilities with reduced gate drive loss, improving overall system performance particularly in PWM and DC-DC converter applications.

Infineon's DirectFET technology integrates the package with the MOSFET chip to minimize conduction and switching losses, providing significant improvements in power density and energy efficiency across applications such as industrial motor drives, power supplies, telecommunications, and automotive electronics.

DirectFET technology minimizes conduction losses and shrinks design footprint. High current capacity and voltage rating suitable for power electronics. Robust thermal handling with efficient dual-sided cooling. Compact surface mount package for modern PCB designs.

Wide operating temperature and voltage ranges support industrial use. Low gate charge and on-resistance enhance switching and conduction performance. Explore the extensive MOSFET offerings from Infineon for efficient and reliable semiconductor solutions at EnvMart.

Infineon DirectFET HEXFET N-Channel MOSFET 60 V 86 A Enhancement Mode Surface Mount 4-Pin MN Package IRF6648TRPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 86 A.

This MOSFET has a maximum drain-source voltage rating of 60 V.

It comes in a surface mount 4-pin MN package with dimensions of 6.35 mm in length, 5.05 mm in width, and a height of 500 µm.

The maximum power dissipation rating for this model is 89 W.

This MOSFET operates within a temperature range of -40°C to 150°C.

The maximum gate-source voltage for this model is -20 V to +20 V.

The typical gate charge for this device is 36 nC.

It features a low maximum drain-source resistance of 7 milliohms.

This model is suitable for advanced power switching applications, including industrial motor drives, power supplies, telecommunications, and automotive electronics.

The forward voltage for this device is 1.3 V, contributing to low conduction losses during operation.

It utilizes DirectFET technology, which minimizes conduction losses and supports efficient dual-sided cooling.

This model features an N-channel configuration, operating in enhancement mode.

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