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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 500μm |
| Length | 6.35mm |
| Model | IRF6648TRPBF |
| Width | 5.05mm |
| Mount Type | Surface |
| Series | DirectFET, HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | MN |
| Minimum Operating Temperature | -40°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 86A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 89W |
| Typical Gate Charge Qg @ Vgs | 36nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Infineon IRF6648TRPBF is a high-efficiency DirectFET HEXFET N-Channel MOSFET designed for advanced power switching applications. It features a surface-mount 4-pin MN package that reduces energy losses and supports high power density through efficient dual-sided cooling.
This MOSFET provides a maximum continuous drain current of 86 A and a maximum drain-source voltage of 60 V, suitable for demanding industrial, automotive (non-qualified), and commercial electronics applications. The device operates in enhancement mode with a maximum gate-source voltage of -20 V to +20 V, making it highly versatile in various control circuits.
The compact dimensions of 6.35 mm length, 5.05 mm width, and 500 µm height contribute to its low profile (0.7 mm) for space-constrained PCB designs while allowing for improved thermal dissipation and reliability. The low maximum drain-source resistance of 7 milliohms and forward voltage of 1.3 V ensure high efficiency in power conversion and switching circuits.
The device supports a maximum power dissipation of 89 W and can operate safely from -40°C up to 150°C, offering durability in harsh thermal environments typically encountered in industrial and HVAC systems.
Typical gate charge of 36 nC results in fast switching capabilities with reduced gate drive loss, improving overall system performance particularly in PWM and DC-DC converter applications.
Infineon's DirectFET technology integrates the package with the MOSFET chip to minimize conduction and switching losses, providing significant improvements in power density and energy efficiency across applications such as industrial motor drives, power supplies, telecommunications, and automotive electronics.
DirectFET technology minimizes conduction losses and shrinks design footprint. High current capacity and voltage rating suitable for power electronics. Robust thermal handling with efficient dual-sided cooling. Compact surface mount package for modern PCB designs.
Wide operating temperature and voltage ranges support industrial use. Low gate charge and on-resistance enhance switching and conduction performance. Explore the extensive MOSFET offerings from Infineon for efficient and reliable semiconductor solutions at EnvMart.
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