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STMicroelectronics FDmesh N-Channel Power MOSFET 20A 600V TO-220 3-Pin Enhancement STP20NM60FD
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP20NM60FD |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | FDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 290mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 192W |
| Typical Gate Charge Qg @ Vgs | 37nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
Key Features
- Supports a maximum continuous drain current of 20 amperes.
- Designed for 600 volts maximum drain-source voltage operation.
- Utilizes enhancement mode for channel conduction.
- Offers a maximum drain-source resistance of 290 milliohms.
- Capable of dissipating up to 192 watts of power safely.
- Operates reliably in temperatures from -65°C up to 150°C.
- Equipped with a typical gate charge of 37 nanocoulombs for efficient switching.
- Maximum gate-source voltage rating of -30 to +30 volts.
Product Description
STMicroelectronics STP20NM60FD is an N-Channel FDmesh Power MOSFET designed for high performance and robustness in power applications. It delivers up to 20 amperes of continuous drain current and withstands drain-source voltages up to 600 volts. The device is packaged in a reliable 3-pin TO-220 through-hole mount suitable for various industrial and commercial power electronics use cases.
With an enhancement mode channel and a low maximum drain-source resistance of 290 milliohms, the MOSFET ensures efficient switching and low conduction losses. Its maximum power dissipation of 192 watts supports substantial thermal management capabilities, while the device operates safely within a wide temperature range from -65°C to 150°C, making it suitable for harsh environments.
The typical gate charge of 37 nanocoulombs allows for fast switching speeds, improving system efficiency in applications such as motor control, power supplies, and converters. The maximum gate-source voltage rating of -30 to +30 volts provides robust gate control protection, and the forward voltage of 1.5 volts indicates conduction efficiency.
The compact TO-220 package with a height of 9.15mm, width of 4.6mm, and length of 10.4mm facilitates straightforward assembly and heat dissipation in power electronic circuits. This MOSFET does not carry any automotive compliance or special certifications but is suited broadly for electronic design, industrial, and power management tasks.
Supports a maximum continuous drain current of 20 amperes. Designed for 600 volts maximum drain-source voltage operation. Utilizes enhancement mode for channel conduction. Offers a maximum drain-source resistance of 290 milliohms.
Capable of dissipating up to 192 watts of power safely. Operates reliably in temperatures from -65°C up to 150°C. Equipped with a typical gate charge of 37 nanocoulombs for efficient switching. Maximum gate-source voltage rating of -30 to +30 volts.
Forward voltage drop of 1.5 volts during conduction. Package type is TO-220 with through-hole mount style.
This STMicroelectronics FDmesh N-Channel Power MOSFET is ideal for applications in industrial power management, electronic controls, and manufacturing automation systems. Explore more power semiconductor components and solutions at EnvMart for robust, reliable industrial electronics.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20 amperes.
This MOSFET is designed for a maximum drain-source voltage of 600 volts.
It can dissipate up to 192 watts safely.
The typical gate charge is 37 nanocoulombs, which allows for efficient switching.
The dimensions of the TO-220 package are 9.15mm in height, 4.6mm in width, and 10.4mm in length.
The maximum gate-source voltage rating is -30 to +30 volts.
The maximum drain-source resistance is 290 milliohms.
It operates reliably in temperatures ranging from -65°C to 150°C.
This model utilizes an enhancement mode channel for conduction.
The forward voltage drop during conduction is 1.5 volts.
The device has a pin count of 3.
The country of origin for this MOSFET is India.
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