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Infineon HEXFET Type P-Channel MOSFET, 23 A, 100 V Enhancement Mode, 3-Pin TO-220 IRF9540NPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF9540NPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 23A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 117mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 140W |
| Typical Gate Charge Qg @ Vgs | 97nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.6V |
| IRF9540NPBF P-Channel MOSFET, 23 A, 100 V HEXFET, 3-Pin TO-220AB InfineonBrand | Infineon |
Key Features
- Supports a maximum continuous drain current of 23 amperes for robust operation.
- Maximum drain-source voltage rating of 100 volts ensures reliable performance under high voltage.
- Low on-resistance of 117 milliohms reduces power loss and improves efficiency.
- Power dissipation capability up to 140 watts suitable for intensive electronic applications.
- Enhancement mode MOSFET allowing precise output control in circuits.
- Operates reliably in temperatures ranging from -55°C to 175°C for diverse environments.
- Designed for through-hole mounting with a 3-pin TO-220 package.
- Typical gate charge of 97 nanocoulombs enables fast switching and efficient operation.
Product Description
Infineon IRF9540NPBF HEXFET Type P-Channel MOSFET is a robust semiconductor device designed for high-current electrical applications requiring efficient power handling and precise control. It features an enhancement mode configuration that allows accurate switching performance, making it indispensable in many industrial and automation scenarios.
With a maximum continuous drain current of 23 A and a drain-source voltage tolerance of 100 V, this MOSFET supports demanding power management tasks, such as motor speed regulation and power supply stabilization. Its low drain-source resistance of 117 milliohms minimizes energy losses and improves overall circuit efficiency.
The device tolerates operating temperatures from -55°C up to 175°C, supporting reliable functioning in harsh environmental conditions. Its construction in a 3-pin TO-220 package facilitates through-hole mounting, which is widely used in various electronic assemblies.
Its typical gate charge of 97 nC allows for swift switching, making it suitable for high-frequency applications in automation and control circuits. The MOSFET's power dissipation capability of 140 W accommodates intensive usage without overheating.
Handles continuous drain currents up to 23 amperes for robust performance. Features a maximum drain-source voltage of 100 volts ensuring operational stability. Designed with a low maximum drain-source resistance of 117 milliohms to optimise energy efficiency.
Supports power dissipation up to 140 watts suitable for industrial use. Contains a 3-pin TO-220 package with through-hole mounting ease. Operates in a wide temperature range from -55°C to +175°C for environmental resilience.
Typical gate charge of 97 nanocoulombs facilitates fast switching capabilities. Low forward voltage of -1.6 V enhances power delivery efficiency. Suitable for use in power management, motor control, power supply, and automation systems.
Compact dimensions support easy integration into electronic assemblies.
This MOSFET is ideal for industrial electronics, automation, motor control systems, power supplies, and other electrical engineering applications requiring reliable high current and voltage handling in compact form factors.
Browse more power semiconductors and MOSFETs at EnvMart for compatible industrial electronic components and systems.
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Frequently Asked Questions
The maximum continuous drain current for this model is 23 amperes.
It has a maximum drain-source voltage rating of 100 volts.
This unit is designed for through-hole mounting with a 3-pin TO-220 package.
The power dissipation capability is up to 140 watts, suitable for intensive electronic applications.
The typical gate charge is 97 nanocoulombs, enabling fast switching and efficient operation.
It operates reliably in temperatures ranging from -55°C to 175°C.
The maximum drain-source resistance is 117 milliohms, which helps reduce power loss.
The forward voltage is -1.6 volts, which enhances power delivery efficiency.
The package type is TO-220, which is standard for many power semiconductors.
It is suitable for applications in power management, motor control, power supply, and automation systems.
This model features a P-channel type configuration, allowing for specific output control in circuits.
The height of this MOSFET is 8.77 mm.
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