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Infineon HEXFET N-Channel MOSFET 87 A 100 V Enhancement Mode 3-Pin TO-220AB IRFZ24NPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRFZ24NPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | JEDEC TO-220AB |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 87A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 0.009Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 71nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| Infineon IRFZ24NPBF N-channel MOSFET, 17 A, 55 V HEXFET, 3-Pin TO-220ABBrand | Infineon |
Key Features
- Supports maximum continuous drain current of 87 amperes.
- Maximum drain-source voltage rated at 100 volts for versatile use.
- Features low on-resistance of 0.009 ohms to reduce power loss.
- Utilizes enhancement mode channel for precise switching control.
- Can dissipate up to 200 watts of power with high thermal tolerance.
- Operates reliably from -55°C to +175°C temperature range.
- Complies with JEDEC TO-220AB industry standard package.
- Through-hole mount type facilitates easy installation on PCBs.
Product Description
Infineon IRFZ24NPBF N-Channel MOSFET is a powerful semiconductor device designed to handle high current loads up to 87A and voltages up to 100V in enhancement mode. Packaged in a JEDEC-standard TO-220AB 3-pin configuration, it facilitates easy integration in through-hole mounting applications.
This MOSFET exhibits an exceptionally low drain-source on-resistance of 0.009 ohms, minimizing power loss and improving overall efficiency in electronic circuits. It can dissipate a maximum power of 200 watts and withstands operating temperatures from -55°C to +175°C, making it suitable for demanding industrial and electrical environments.
The forward voltage of 1.3V and a typical gate charge of 71nC contribute to its fast switching capabilities, making it ideal for power management, motor control, HVAC systems, automotive electronics, and renewable energy applications.
Its rugged construction and thermal tolerance support use in automation and control systems where reliability and efficiency are critical. The standard TO-220AB package ensures compatibility with conventional PCB layouts for straightforward installation and maintenance.
Supports maximum continuous drain current of 87 amperes. Maximum drain-source voltage rated at 100 volts for versatile use. Features low on-resistance of 0.009 ohms to reduce power loss. Utilizes enhancement mode channel for precise switching control.
Can dissipate up to 200 watts of power with high thermal tolerance. Operates reliably from -55°C to +175°C temperature range. Complies with JEDEC TO-220AB industry standard package. Through-hole mount type facilitates easy installation on PCBs.
Forward voltage is 1.3 volts ensuring efficient conduction. Typical gate charge is 71 nanocoulombs enabling fast switching.
This MOSFET is essential for professionals in electronics, manufacturing, automotive, HVAC, and renewable energy sectors seeking durable, efficient power switching components. Explore more Infineon semiconductor products and MOSFET devices at EnvMart for advanced electronic solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 87 amperes.
This MOSFET is rated for a maximum drain-source voltage of 100 volts.
It features a low drain-source on-resistance of 0.009 ohms, which helps reduce power loss.
It can dissipate a maximum power of 200 watts, supporting high thermal tolerance.
This model operates reliably within a temperature range of -55°C to +175°C.
It comes in a JEDEC-standard TO-220AB package and is designed for through-hole mounting.
The typical gate charge is 71 nanocoulombs, which contributes to its fast switching capabilities.
The forward voltage drop is 1.3 volts, ensuring efficient conduction.
This model has a pin count of 3, corresponding to its TO-220AB configuration.
It is an N-channel MOSFET utilizing enhancement mode for precise switching control.
It is suitable for applications in power management, motor control, HVAC systems, automotive electronics, and renewable energy sectors.
It complies with the JEDEC TO-220AB industry standard package.
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