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Infineon HEXFET N-Channel MOSFET 30A 55V Enhancement Mode 3-Pin TO-220 IRLZ34NPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRLZ34NPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 35mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 68W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.3V |
| IRLZ34NPBF N-Channel MOSFET, 30 A, 55 V HEXFET, 3-Pin TO-220AB InfineonBrand | Infineon |
Key Features
- This MOSFET features a low on-resistance of 35 milliohms to minimize power loss.
- It supports a maximum power dissipation of 68 watts for high-performance operations.
- Operating temperature range from -55°C to 175°C ensures reliability under extreme conditions.
- The device has a typical gate charge of 25nC at 5V enabling fast switching performance.
- It is suitable for through-hole mounting using the TO-220 package type.
- The maximum gate-source voltage rating is ±16 volts for safe circuit operation.
- Compact dimensions of 10.54mm length, 8.77mm height, and 4.69mm width optimize PCB space.
Product Description
Infineon IRLZ34NPBF is a high-performance HEXFET N-Channel MOSFET designed for power management applications demanding efficiency and reliability. It supports a maximum continuous drain current of 30A and withstands up to 55V drain-source voltage in enhancement mode. Packaged in a compact 3-pin TO-220 form factor suitable for through-hole mounting, this MOSFET operates effectively across a broad temperature range from -55°C to +175°C, making it ideal for demanding industrial and commercial environments.
Featuring a low on-resistance of 35 milliohms and a high power dissipation capability of 68 watts, the device reduces power loss and heat generation, enhancing overall system efficiency. Its typical gate charge of 25 nanocoulombs at 5 volts allows for swift switching responses, beneficial in high-frequency circuits.
This MOSFET finds versatile application across multiple sectors including industrial automation, telecommunications, renewable energy power management, and DC-DC conversion systems. Its capacity to sustain a maximum gate-source voltage of ±16V ensures robust and safe integration into diverse electronic circuits.
Compact physical dimensions (length: 10.54mm, height: 8.77mm, width: 4.69mm) and the TO-220 package type facilitate effective PCB layout and heat dissipation. With a rated maximum operating temperature of 175°C, it maintains functional stability in intense conditions.
The product's country of origin is China. Infineon's IRLZ34NPBF is a new condition MOSFET trusted for quality and performance in power electronic designs. Low on-resistance of 35 milliohms reduces power loss. Maximum power dissipation of 68 watts enhances performance.
Wide operating temperature range from -55°C to 175°C. Typical gate charge of 25nC at 5V enables fast switching. 3-pin TO-220 package supports through-hole mounting. Maximum gate-source voltage of ±16V provides operational safety.
Compact size aids PCB layout efficiency.
For industrial applications, this MOSFET is optimized for power management, DC-DC converters, motor driver circuits, and high-speed telecommunications switching. Browse the Electronics & Electricals category on EnvMart for more semiconductor solutions and power management components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 30A.
This MOSFET has a maximum drain-source voltage rating of 55V.
It features a low on-resistance of 35 milliohms, which helps minimize power loss.
The maximum power dissipation capability is 68 watts, enhancing its performance in power management applications.
The typical gate charge at 5V is 25 nanocoulombs, allowing for fast switching performance.
It operates effectively across a temperature range from -55°C to +175°C.
This model supports through-hole mounting using the TO-220 package type.
The dimensions are 10.54mm in length, 8.77mm in height, and 4.69mm in width.
The maximum gate-source voltage rating is ±16 volts, ensuring safe operation.
This MOSFET is suitable for applications in industrial automation, telecommunications, renewable energy power management, and DC-DC conversion systems.
The country of origin for this MOSFET is China.
This model has a pin count of 3.
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