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Infineon HEXFET Type P-Channel MOSFET, 74 A, 55 V, 200W Power Dissipation, 3-Pin TO-220 IRF4905PBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF4905PBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 74A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 20mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 180nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.6V |
Key Features
- High continuous drain current capacity of 74 A supports demanding power management applications.
- Maximum drain-source voltage of 55 V ensures effective operation in medium voltage circuits.
- Low on-resistance of 20mΩ enhances energy efficiency during load conditions.
- Enhancement mode device enables precise gate voltage control for switching.
- TO-220 package supports efficient heat dissipation and easy installation.
- Capable of dissipating up to 200 W power under optimal thermal management.
- Wide operating temperature range from -55°C to 175°C suitable for harsh environments.
- Typical gate charge of 180 nC facilitates fast switching response.
Product Description
Infineon's IRF4905PBF is a HEXFET Type P-Channel MOSFET designed for high-performance power management applications. Rated for a continuous drain current of 74 A and a maximum drain-source voltage of 55 V, it assures reliable operation in electronic circuits demanding high current and voltage tolerance.
This device features a low drain-source on-resistance of 20 milliohms, maximizing energy efficiency and minimizing power losses during conduction. The enhancement mode channel enables controlled switching, making it an ideal choice for precise load regulation.
The device comes in a TO-220AB three-pin package suitable for through-hole mounting, enabling effective heat dissipation and straightforward integration into industrial circuits. It is capable of dissipating power up to 200 W with proper thermal management, making it suitable for robust power conversion systems.
Operating across a wide temperature range from -55°C to 175°C, the IRF4905PBF is engineered to withstand demanding thermal conditions. Its typical gate charge of 180 nC supports fast switching, which is beneficial in power supply and motor control applications.
Common industrial uses include DC-DC converters, motor drives, power supplies, automation systems, and other applications requiring reliable switching devices capable of handling high currents.
High continuous drain current capability of 74 A supports demanding applications. Maximum drain-source voltage of 55 V enables effective power management. Low on-resistance of 20mΩ improves energy efficiency. Enhancement mode MOSFET for precise control.
TO-220 package allows efficient heat dissipation. Maximum power dissipation of 200 W with proper cooling. Wide operating temperature range from -55°C to 175°C. Typical gate charge of 180 nC facilitates rapid switching. Ideal for DC-DC converters, motor control, and automation systems.
This Infineon MOSFET is a trusted choice for engineers and professionals seeking reliability and performance in power electronics. Explore more semiconductor solutions in EnvMart’s MOSFET category for your electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 74 A, making it suitable for high-performance power management applications.
This device has a maximum drain-source voltage rating of 55 V, which ensures effective operation in medium voltage circuits.
The on-resistance of this MOSFET is 20 milliohms, which enhances energy efficiency during load conditions.
The typical gate charge for the IRF4905PBF is 180 nC, facilitating fast switching response in applications.
It comes in a TO-220 package type, which supports through-hole mounting and effective heat dissipation.
The operating temperature range for this MOSFET is from -55°C to 175°C, making it suitable for harsh environments.
This model is capable of dissipating up to 200 W of power under optimal thermal management conditions.
The channel type of this MOSFET is P-Channel, which allows for controlled switching in power applications.
The maximum gate-source voltage for the IRF4905PBF is -20V to +20V, which is important for its operation.
The dimensions of the IRF4905PBF are 10.54 mm in length, 4.69 mm in width, and 8.77 mm in height.
This model is commonly used in applications such as DC-DC converters, motor drives, and power supplies.
The enhancement mode channel enables precise gate voltage control for switching, making it ideal for load regulation.
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