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Infineon HEXFET N-Channel MOSFET, 49 A Continuous Drain Current, 55 V Voltage, Enhancement Mode, 3-Pin TO-220 IRFZ44NPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.67mm |
| Model | IRFZ44NPBF |
| Width | 4.4mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 49A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 17.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 94W |
| Typical Gate Charge Qg @ Vgs | 63nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| IRFZ44NPBF N-Channel MOSFET, 49 A, 55 V HEXFET, 3-Pin TO-220AB InfineonBrand | Infineon |
Key Features
- Utilises enhancement mode for effective switching control.
- Supports a maximum continuous drain current of 49 A at 25°C.
- Features low on-resistance of 17.5 milliohms for efficiency.
- Maximum power dissipation is 94 W to handle high loads safely.
- Operates reliably from -55°C up to 175°C.
- Typical gate charge is 63 nC enabling fast switching speeds.
- Maximum gate-source voltage is ±20 V for robust operation.
- The TO-220 package supports through-hole mounting with 3 pins.
Product Description
Infineon IRFZ44NPBF is a HEXFET N-Channel MOSFET designed for demanding electronics, automation, and electrical engineering applications. It features a maximum continuous drain current of 49 A at 25°C and a maximum drain-source voltage of 55 V, making it ideal for power management and high-efficiency switching solutions.
Constructed with enhancement mode technology, this MOSFET offers a low drain-source resistance of 17.5 milliohms which reduces power losses and improves overall system efficiency. The device supports a maximum power dissipation of 94 W and operates reliably across a wide temperature range from -55°C to 175°C, ensuring robust performance in harsh environments.
Its typical gate charge of 63 nC allows for fast switching times, vital for high-frequency applications like DC-DC converters and motor control systems. The maximum gate-source voltage rating of ±20 V ensures stable control during operation. Packaged in a 3-pin TO-220 through-hole format, the IRFZ44NPBF is compatible with standard PCB layouts facilitating easy integration into existing designs.
This MOSFET withstands repetitive avalanche conditions with an avalanche current rating of 25 A and avalanche energy of 9.4 mJ, making it durable for industrial use cases including renewable energy inverters, automotive power electronics, and industrial automation equipment.
Utilises enhancement mode for responsive control. Low on-resistance of 17.5 milliohms promotes energy efficiency. High continuous drain current rating enables heavy load handling. Wide operating temperature range from -55°C to 175°C.
Fast switching speeds aided by low gate charge. Robust gate voltage tolerance protects device integrity. Standard TO-220 package ensures easy PCB integration. Designed for industrial, automotive, and renewable energy applications.
Durable under repetitive avalanche conditions for enhanced reliability. Supports power management in demanding electrical circuits.
This Infineon MOSFET is suited for application in industrial automation, motor drives, solar inverter systems, and other power electronics where reliable high-current switching is essential. Explore more power transistor solutions and advanced semiconductor components on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 49 A at 25°C.
It has a maximum drain-source voltage of 55 V.
The typical gate charge is 63 nC, which enables fast switching speeds.
This MOSFET operates reliably from -55°C to 175°C.
The device features a low on-resistance of 17.5 milliohms, promoting energy efficiency.
The maximum power dissipation for this model is 94 W.
The TO-220 package supports a 3-pin configuration for through-hole mounting.
It utilizes an N-channel configuration with enhancement mode technology.
This model is suitable for applications in industrial automation, motor drives, and solar inverter systems.
The maximum gate-source voltage rating is ±20 V, ensuring stable control during operation.
The dimensions are 10.67 mm in length, 4.4 mm in width, and 8.77 mm in height.
It has an avalanche current rating of 25 A and an avalanche energy rating of 9.4 mJ.
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