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Infineon HEXFET N-Channel Power MOSFET 100 V 63 A Enhancement Mode Surface Mount 3-Pin TO-252 IRFR4510TRPBF

Category MOSFETs Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 2.39mm
Length 6.73mm
Model IRFR4510TRPBF
Width 7.49mm
Mount Type Surface
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 63A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 13.9mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 143W
Typical Gate Charge Qg @ Vgs 54nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.3V
N-Channel MOSFET, 56 A, 100 V, 3-Pin DPAK Infineon IRFR4510PBFBrand Infineon

Key Features

  • This MOSFET operates in enhancement mode suitable for high efficiency power switching.
  • It features a maximum continuous drain current of 63 amperes.
  • The device supports a maximum drain-source voltage of 100 volts.
  • Maximum power dissipation capability is 143 watts, enabling robust thermal management.
  • Compact TO-252 package dimensions allow for versatile surface mounting on PCBs.
  • Maximum operating temperature reaches up to 175°C for high reliability in harsh conditions.
  • Low on-resistance of 13.9 milliohms reduces conduction losses.
  • Maximum gate-source voltage ratings are -20V to +20V, allowing flexible gate drive options.

Product Description

Infineon IRFR4510TRPBF HEXFET N-Channel Power MOSFET is a high-performance semiconductor designed for power switching applications demanding high current capacity and voltage handling. With a continuous drain current rating of 63 A and a maximum drain-source voltage of 100 V, this device delivers reliable operation in industrial, automotive, and electronics manufacturing environments.

Packaged in a compact TO-252 3-pin surface mount form factor, it offers easy integration into modern PCB layouts. The enhancement mode channel ensures efficient conduction with a low on-resistance of 13.9 milliohms, minimizing power losses and heat generation.

Heat dissipation is supported up to 143 watts of power, coupled with a wide operating temperature range from -55°C up to 175°C, making this MOSFET suitable for demanding thermal environments. The device features a maximum gate-source voltage of -20 V to +20 V and a typical gate charge of 54 nC, enhancing switching speed and control.

This device operates in enhancement mode for efficient load switching. Maximum continuous drain current of 63 A supports heavy load demands. Maximum drain-source voltage of 100 V protects against high voltage spikes. Low drain-source resistance reduces energy loss during conduction.

Compact TO-252 surface mount package allows flexible board design. Capable of dissipating 143 W power ensuring thermal stability. Wide operating temperature range supports harsh industrial conditions. Typical gate charge and voltage ratings support responsive switching.

Forward voltage of 1.3 V improves conduction efficiency during operation.

This MOSFET is suitable for industrial power supply systems, motor controls, automotive electronics, and other high-power electronic designs requiring durable and efficient switching components. As part of Infineon’s HEXFET family, it offers benchmark conduction performance to optimize system efficiency and design versatility.

Discover more discrete semiconductor solutions and power management components in the Infineon category on EnvMart.

Explore more products in our MOSFETs category.

Infineon HEXFET N-Channel Power MOSFET 100 V 63 A Enhancement Mode Surface Mount 3-Pin TO-252 IRFR4510TRPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 63 amperes.

It supports a maximum drain-source voltage of 100 volts.

This model can dissipate a maximum power of 143 watts.

The dimensions of the TO-252 package are 6.73 mm in length, 7.49 mm in width, and 2.39 mm in height.

The maximum drain-source resistance is 13.9 milliohms.

The operating temperature range is from -55°C to 175°C.

The typical gate charge is 54 nanocoulombs (nC).

The maximum gate-source voltage ratings are -20V to +20V.

This model uses an enhancement mode N-channel configuration.

It is suitable for industrial power supply systems, motor controls, and automotive electronics.

The TO-252 package has 3 pins.

The country of origin for this model is India.

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