Infineon HEXFET N-Channel MOSFET, 36 A, 100 V, Enhancement Mode, 3-Pin TO-263 IRL540NSTRLPBF

Infineon IRL540NSTRLPBF HEXFET N-Channel MOSFET is a high-performance discrete MOSFET designed for electronic and industrial applications requiring efficient power management. It supports a maximum continuous drain current of 36 A and can handle drain-source voltages up to 100 V. The device operates using enhancement mode characteristics and is housed in a compact TO-263 surface mount package featuring three pins for standard PCB assembly.

This MOSFET offers a low typical drain-source resistance of 63 milliohms, reducing conduction losses and improving overall efficiency in power switching circuits. The robust gate-source voltage limit of ±16 V protects the device during voltage transients. It can dissipate up to 140 W of power, enabling use in high power environments with adequate thermal management.

The device tolerates a wide temperature range from -55°C to +175°C, which ensures operational reliability under harsh industrial conditions. Its gate charge of 74 nC is optimized for quick switching, making it suitable for motor control, power supplies, inverters, and other applications requiring fast response times. The forward voltage drop of approximately 1.3 V aids in reducing energy loss during conduction cycles.

Dimensions are approximately 11.3 mm width, 10.67 mm length, and 4.83 mm height, making it suitable for surface mounting where space constraints exist. This product does not carry automotive-grade certifications, so it is recommended for general industrial, electronic, laboratory, and manufacturing use. The Infineon HEXFET series is known for its reliable and efficient power semiconductor components widely used across various sectors.

This part is ideal for engineers and designers seeking a reliable N-channel MOSFET transistor for switching and amplification tasks with high drain current capability and moderate voltage rating. Use in electronic circuits, power regulation modules, and industrial control systems to improve efficiency and performance.

Compact TO-263 surface mount package with 3 pins for easy integration. Low on-resistance of 63 milliohms optimizes conduction efficiency. Withstands gate-source voltages of up to ±16 V ensuring robust operation. High maximum power dissipation rating of 140 W supports demanding applications.

Wide operating temperature range from -55°C to 175°C for reliability. Typical gate charge of 74 nC allows efficient switching performance. Forward voltage drop of 1.3 V minimizes power loss during conduction. Dimensions approximately 11.3 mm wide, 10.67 mm long, and 4.83 mm high.

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