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Infineon HEXFET N-Channel MOSFET 94 A Continuous Drain Current 55 V Maximum Drain Source Voltage Surface IRF1010ZSTRLPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 4.83mm
Length 10.67mm
Model IRF1010ZSTRLPBF
Width 11.3mm
Mount Type Surface
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 94A
Maximum Drain Source Voltage Vds 55V
Maximum Drain Source Resistance Rds 7.5mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 140W
Typical Gate Charge Qg @ Vgs 63nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.3V
Infineon HEXFET N-Channel MOSFET, 94 A, 55 V, 3-Pin D2PAK IRF1010ZSPBFBrand Infineon

Key Features

  • Supports maximum continuous drain current of 94 amperes enhancing load handling capabilities.
  • Features low maximum drain-source resistance of 7.5 milliohms reducing power loss.
  • Capable of operating up to 175°C making it suitable for high-temperature environments.
  • Packaged in a TO-263 surface mount package for compact PCB layouts and efficient thermal management.
  • Enhancement mode channel with typical gate charge of 63 nanocoulombs ensuring fast switching.
  • Designed for pulsed drain currents up to 360 amperes to handle transient states effectively.
  • Complies with automotive standard AEC-Q101 ensuring quality in critical applications.

Product Description

Infineon IRF1010ZSTRLPBF HEXFET N-Channel MOSFET is a high-performance electronic component intended for demanding power management and conversion systems. It supports a maximum continuous drain current rating of 94 amperes and a maximum drain-source voltage of 55 volts, making it well-suited for advanced electronic designs requiring efficient load handling.

This enhancement-mode MOSFET features a low maximum drain-source resistance of 7.5 milliohms, which contributes to minimizing power losses and improving efficiency. With a maximum power dissipation rating of 140 watts and operational temperature range from -55°C to 175°C, it performs reliably in harsh and high-temperature environments. The device includes fast switching capabilities with a typical gate charge of 63 nanocoulombs, reducing delays in circuit response.

It is housed in a TO-263 surface mount package, enabling compact layouts on printed circuit boards and effective thermal management. The MOSFET’s design supports pulsed drain currents up to 360 amperes, allowing it to handle transient current spikes often encountered in motor control and power supply applications.

Maximum continuous drain current of 94 A for robust power handling. Low on-resistance of 7.5 mΩ reduces heat generation and power consumption. High maximum operating temperature of 175°C ensures reliability under thermal stress.

Surface mount TO-263 package supports compact and efficient PCB designs. Fast switching enabled by a typical gate charge of 63 nC enhances circuit responsiveness. Automotive standard AEC-Q101 certification for quality in automotive systems.

Dimensions approx. 10.67 mm length, 11.3 mm width, and 4.83 mm height.

This MOSFET is widely used in automation, electronics, electrical, and mechanical sectors. Typical applications include power management systems, motor drives in automation technology, high-efficiency power supply designs, electric vehicle electronics, and renewable energy conversions.

For reliable and efficient performance in demanding industrial and automotive environments, the Infineon IRF1010ZSTRLPBF is a suitable choice. Browse more semiconductor components on EnvMart for your electronic design needs.

Infineon HEXFET N-Channel MOSFET 94 A Continuous Drain Current 55 V Maximum Drain Source Voltage Surface IRF1010ZSTRLPBF
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Frequently Asked Questions

The maximum continuous drain current of this model is 94 amperes, allowing it to handle significant power loads efficiently.

This MOSFET supports a maximum drain-source voltage of 55 volts, suitable for various electronic applications.

It features a low maximum drain-source resistance of 7.5 milliohms, which helps to minimize power losses during operation.

The operational temperature range for this MOSFET is from -55°C to 175°C, making it suitable for high-temperature environments.

This model has a typical gate charge of 63 nanocoulombs, enabling fast switching capabilities in circuits.

It is packaged in a TO-263 surface mount configuration, which supports compact PCB layouts and efficient thermal management.

The maximum power dissipation rating for this MOSFET is 140 watts, ensuring reliable performance under load.

It complies with the automotive standard AEC-Q101, ensuring quality for critical automotive applications.

The dimensions of this MOSFET are approximately 10.67 mm in length, 11.3 mm in width, and 4.83 mm in height.

It is widely used in power management systems, motor drives in automation technology, high-efficiency power supply designs, and electric vehicle electronics.

This model features an N-channel type, which is commonly used for various electronic switching applications.

This MOSFET has a pin count of 3, which is typical for surface mount devices in this category.

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