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Infineon SIPMOS Type P-Channel MOSFET 60 V 80 A Enhancement Mode 3-Pin TO-220 SPP80P06PHXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 15.95mm |
| Length | 10.36mm |
| Model | SPP80P06PHXKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | SIPMOS |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 23mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 340W |
| Typical Gate Charge Qg @ Vgs | 115nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.6V |
Key Features
- The device operates as an enhancement mode P-channel transistor.
- Maximum continuous drain current is rated at 80 amperes.
- Maximum drain-source voltage of 60 volts enables medium voltage applications.
- Low on-resistance of 23 milliohms reduces conduction losses.
- Typical gate charge is 115 nanocoulombs for efficient switching.
- Maximum power dissipation capacity is 340 watts for robust thermal performance.
- Gate-source voltage tolerance ranges from -20 to +20 volts for flexible gate drive.
- Designed for through-hole mounting in a TO-220 package with 3 pins.
Product Description
Infineon SPP80P06PHXKSA1 is a SIPMOS series P-channel MOSFET designed for high-current, high-temperature industrial applications. The device integrates an enhancement mode transistor with a maximum continuous drain current of 80 amperes and a drain-source voltage rating of 60 volts. Its TO-220 through-hole package facilitates easy mounting and effective heat dissipation.
This MOSFET features a low on-resistance of 23 milliohms, minimizing power losses during conduction, and a typical gate charge of 115 nanocoulombs, which balances switching speed and drive energy. The gate-source voltage tolerance is ±20 volts, allowing flexible gate-drive configurations. It supports a maximum power dissipation of 340 watts, enabling use in thermally challenging systems.
Operating temperature limits extend from -55°C to 175°C, making it suitable for applications involving severe thermal conditions. The device is ideal for use in power conversion, motor drive circuits, synchronous rectification in server supplies, battery protection circuits, and other high-current switching scenarios.
The device functions as a P-channel enhancement MOSFET for high-side switching applications. It offers robust thermal handling supported by the TO-220 package and maximum power dissipation rating. Its low Rds(on) and controlled gate charge improve overall system efficiency.
Wide temperature tolerance allows deployment in automotive, industrial, and power management systems.
This MOSFET is a reliable choice for industrial, automotive, and power electronics engineering applications requiring efficient, high-current switching with outstanding thermal endurance. Explore the Electronics & Electricals category at EnvMart for similar Infineon power semiconductors.
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Frequently Asked Questions
The maximum continuous drain current for this model is rated at 80 amperes.
This MOSFET has a maximum drain-source voltage rating of 60 volts.
The typical gate charge for this model is 115 nanocoulombs.
The low on-resistance value is 23 milliohms, which helps reduce conduction losses.
The operating temperature limits extend from -55°C to 175°C.
It is designed in a TO-220 package type, suitable for through-hole mounting.
The maximum power dissipation capacity is 340 watts, enabling robust thermal performance.
The gate-source voltage tolerance ranges from -20 to +20 volts, allowing for flexible gate drive configurations.
This MOSFET features a pin count of 3.
It is suitable for power conversion, motor drive circuits, synchronous rectification, and battery protection circuits.
The channel type is P-channel, and it operates in enhancement mode.
The country of origin for this device is India.
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