Infineon SIPMOS Type P-Channel MOSFET 80 A 60 V Enhancement 3-Pin TO-220 SPP80P06PHXKSA1

Infineon SPP80P06PHXKSA1 is a SIPMOS series Power MOSFET featuring a P-channel enhancement mode operation. It is engineered for high-current, high-temperature industrial and electronic applications requiring efficient power switching and thermal robustness. The device is housed in a 3-pin TO-220 package designed for through-hole mounting, facilitating easy integration and heat dissipation.

This MOSFET supports a maximum continuous drain current of 80 A and can withstand a drain-source voltage up to 60 V, making it ideal for medium voltage power conversion and switching circuits. Its low on-resistance of 23 mΩ minimizes power losses, contributing to efficient operation in power supplies and motor control systems.

The typical gate charge of 115 nC allows a balance between switching speed and gate drive energy requirements. The device can tolerate gate-source voltages of -20 V to +20 V, providing flexible gate driving options. The overall power dissipation rating of 340 W requires appropriate heat management, such as heatsinking and adequate airflow, to maintain reliability under thermal stress.

Its operational temperature range from -55°C to 175°C suits demanding environments including automotive, industrial power supplies, and battery protection circuits. The p-channel configuration facilitates use in high-side switch topologies where the gate voltage is driven lower than the source for device activation.

This MOSFET is suitable for applications such as DC-DC converters, synchronous rectification in server power rails, motor drive stages, and protection circuits, offering strong performance under thermally challenging conditions.

Maximum continuous drain current of 80 A supports high current loads. Drain-source voltage rating of 60 V suitable for medium-voltage switching. Low drain-source resistance of 23 mΩ reduces conduction losses. Typical gate charge of 115 nC balances switching speed and drive energy.

Maximum power dissipation up to 340 W ensures reliable thermal endurance. Wide operating temperature from -55°C to 175°C for harsh environments. Gate-source voltage tolerance of ±20 V allows flexible gate drive designs. Through-hole mount type with TO-220 package for easy PCB integration.

Compact dimensions optimize PCB space and heat dissipation.

Select this Infineon SIPMOS MOSFET for industrial, automotive, and power management systems demanding high current and temperature resilience. Browse related power semiconductor devices and accessories at EnvMart for comprehensive solutions.