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Infineon OptiMOS 5 N-Channel MOSFET, 100 A, 40 V Enhancement Mode, 8-Pin TDSON BSC010N04LSATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 6.1mm |
| Model | BSC010N04LSATMA1 |
| Width | 5.35mm |
| Mount Type | Surface |
| Series | OptiMOS 5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 139W |
| Typical Gate Charge Qg @ Vgs | 95nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Key Features
- Features a maximum continuous drain current of 100 A for robust current handling.
- Operates at a maximum drain-source voltage of 40 V for medium-voltage applications.
- Constructed with an 8-pin TDSON surface mount package for compact mounting on PCBs.
- Utilizes enhancement mode channel operation ensuring effective switching capabilities.
- Offers a very low maximum drain-source resistance of 1.3 mΩ to minimize power losses.
- Supports a maximum power dissipation rating of 139 W for high thermal capacity.
- Operates reliably within a temperature range from -55°C to 150°C suitable for industrial environments.
- Typical gate charge is 95 nC at 9 V gate voltage for responsive switching.
Product Description
Infineon BSC010N04LSATMA1 is an OptiMOS 5 series N-Channel MOSFET engineered for high efficiency and reliable power switching applications. It offers a maximum continuous drain current of 100 A and a maximum drain-source voltage of 40 V, ideal for a wide range of industrial and electronic uses. The 8-pin TDSON surface mount package enables easy integration in compact designs.
This MOSFET features enhancement mode operation, low on-resistance of 1.3 mΩ, and can dissipate up to 139 W, making it suitable for high power density applications in power management, automotive electronics, and industrial motor controls. It withstands operating temperatures from -55°C to +150°C, ensuring durability under demanding conditions.
The device also includes robust maximum gate-source voltage tolerance of ±20 V and a typical gate charge of 95 nC, enhancing switching performance and efficiency. The compact dimensions of 6.1 mm length, 5.35 mm width, and 1.1 mm height support space-constrained PCB layouts.
Infineon's OptiMOS 5 family is well-regarded for delivering best-in-class power density and efficiency for power converters, switching regulators, and consumer electronics. This MOSFET is ideal for industrial, automotive, and electronic manufacturing applications requiring reliable semiconductor switching components.
Maximum continuous drain current: 100 A. Maximum drain-source voltage: 40 V. Low maximum Rds(on): 1.3 mΩ for efficient power handling. High maximum power dissipation: 139 W. Wide operating temperature range: -55°C to 150°C.
8-Pin TDSON package for surface mounting. Explore more electronic components and MOSFET solutions at EnvMart for advanced power management and semiconductor needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 100 A, allowing for robust current handling in various applications.
It operates at a maximum drain-source voltage of 40 V, suitable for medium-voltage applications.
This unit comes in an 8-pin TDSON surface mount package, designed for compact mounting on PCBs.
The maximum power dissipation rating is 139 W, which supports high thermal capacity for demanding applications.
It operates reliably within a temperature range from -55°C to 150°C, making it suitable for industrial environments.
The typical gate charge is 95 nC at a 9 V gate voltage, enhancing the switching performance of this MOSFET.
This model has a maximum gate-source voltage tolerance of ±20 V, ensuring reliable operation under varying conditions.
The maximum drain-source resistance is 1.3 mΩ, which helps minimize power losses during operation.
The dimensions are 6.1 mm in length, 5.35 mm in width, and 1.1 mm in height, supporting space-constrained PCB layouts.
It is suitable for high power density applications in power management, automotive electronics, and industrial motor controls.
This model utilizes enhancement mode channel operation, which ensures effective switching capabilities.
The country of origin for this MOSFET is India.
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