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Infineon OptiMOS 5 N-Channel MOSFET, 40 A Continuous Drain Current, 60 V Drain Source Voltage, 8-Pin TDSON BSZ042N06NSATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.1mm
Length 3.4mm
Model BSZ042N06NSATMA1
Width 3.4mm
Mount Type Surface
Series OptiMOS 5
Maximum Operating Temperature 150°C
Package Type TDSON
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 40A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 6.3mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 69W
Typical Gate Charge Qg @ Vgs 27nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • Designed for high-power switching in surface-mount applications.
  • Low on-resistance of 6.3 mΩ reduces conduction losses effectively.
  • Typical gate charge of 27 nC allows faster switching transitions.
  • Maximum power dissipation of 69 W ensures robust performance under load.
  • Operates reliably from -55°C to 150°C temperature range.
  • Compact 3.4 mm x 3.4 mm x 1.1 mm package suitable for space-constrained assemblies.
  • Ideal for synchronous buck converters, motor drivers, and battery management circuits.
  • Enhancement mode channel with 8-pin TDSON surface-mount package.

Product Description

Infineon BSZ042N06NSATMA1 OptiMOS 5 N-Channel MOSFET is a silicon enhancement-mode device optimized for high-power switching applications. It supports a maximum continuous drain current of 40 A and a drain-source voltage rating of 60 V, making it suitable for demanding power conversion tasks in industrial, automotive, and electronic manufacturing environments.

This MOSFET features a low on-resistance of 6.3 mΩ, minimizing conduction losses and improving efficiency in switching stages. A moderate typical gate charge of 27 nC at specified gate voltage allows for fast switching behavior while controlling transition losses. Its thermal design, with an 8-pin TDSON package measuring 3.4 mm by 3.4 mm with 1.1 mm height, provides an effective low thermal resistance path to the printed circuit board, which is essential for sustained power dissipation up to 69 W.

The device can operate in a temperature range from -55°C to 150°C, supporting circuits exposed to extreme environmental conditions. It is specifically tailored for use in synchronous buck converter stages, motor driver half-bridge assemblies, DC-DC power modules commonly found in servers, and battery management and charging circuits, demanding reliability and efficiency.

Gate-drive requirements include adequate peak current sourcing and sinking capability to manage the 27 nC gate charge, enabling swift and efficient switching. The MOSFET's enhancement channel mode and surface-mount TDSON package facilitate integration into compact, high-density electronic designs.

High-current N-channel MOSFET for power switching applications. Low Rds(on) for enhanced efficiency and reduced heat generation. Compact TDSON 8-pin package with effective thermal management. Wide operating temperature range for versatile use environments.

Suitable for synchronous buck converters and motor control circuits. Supports DC-DC converters in server power supplies. Optimized gate charge for balanced switching speed and loss. Enhanced surface-mount design for modern PCB layouts.

This Infineon MOSFET is an ideal choice for engineers targeting efficient, reliable power stage solutions in industrial, automotive, and commercial electronic systems. Explore the Electronics & Electricals category for additional Infineon semiconductor components on EnvMart.

Infineon OptiMOS 5 N-Channel MOSFET, 40 A Continuous Drain Current, 60 V Drain Source Voltage, 8-Pin TDSON BSZ042N06NSATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 40 A.

It has a maximum drain-source voltage rating of 60 V.

The on-resistance is 6.3 mΩ, which helps reduce conduction losses effectively.

The typical gate charge is 27 nC, allowing for faster switching transitions.

The maximum power dissipation for this unit is 69 W, ensuring robust performance under load.

It operates reliably within a temperature range of -55°C to 150°C.

The TDSON package measures 3.4 mm x 3.4 mm with a height of 1.1 mm.

This model features an enhancement mode channel type.

The maximum gate-source voltage is -20 V to +20 V.

It is designed for surface mounting.

It is suitable for synchronous buck converters, motor drivers, and battery management circuits.

The country of origin for this model is India.

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