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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 3.4mm |
| Model | BSZ042N06NSATMA1 |
| Width | 3.4mm |
| Mount Type | Surface |
| Series | OptiMOS 5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 6.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 69W |
| Typical Gate Charge Qg @ Vgs | 27nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Infineon BSZ042N06NSATMA1 OptiMOS 5 N-Channel MOSFET is a silicon enhancement-mode device optimized for high-power switching applications. It supports a maximum continuous drain current of 40 A and a drain-source voltage rating of 60 V, making it suitable for demanding power conversion tasks in industrial, automotive, and electronic manufacturing environments.
This MOSFET features a low on-resistance of 6.3 mΩ, minimizing conduction losses and improving efficiency in switching stages. A moderate typical gate charge of 27 nC at specified gate voltage allows for fast switching behavior while controlling transition losses. Its thermal design, with an 8-pin TDSON package measuring 3.4 mm by 3.4 mm with 1.1 mm height, provides an effective low thermal resistance path to the printed circuit board, which is essential for sustained power dissipation up to 69 W.
The device can operate in a temperature range from -55°C to 150°C, supporting circuits exposed to extreme environmental conditions. It is specifically tailored for use in synchronous buck converter stages, motor driver half-bridge assemblies, DC-DC power modules commonly found in servers, and battery management and charging circuits, demanding reliability and efficiency.
Gate-drive requirements include adequate peak current sourcing and sinking capability to manage the 27 nC gate charge, enabling swift and efficient switching. The MOSFET's enhancement channel mode and surface-mount TDSON package facilitate integration into compact, high-density electronic designs.
High-current N-channel MOSFET for power switching applications. Low Rds(on) for enhanced efficiency and reduced heat generation. Compact TDSON 8-pin package with effective thermal management. Wide operating temperature range for versatile use environments.
Suitable for synchronous buck converters and motor control circuits. Supports DC-DC converters in server power supplies. Optimized gate charge for balanced switching speed and loss. Enhanced surface-mount design for modern PCB layouts.
This Infineon MOSFET is an ideal choice for engineers targeting efficient, reliable power stage solutions in industrial, automotive, and commercial electronic systems. Explore the Electronics & Electricals category for additional Infineon semiconductor components on EnvMart.
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