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Infineon OptiMOS N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin TSDSON BSC009NE2LSATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.1mm
Length 6.1mm
Model BSC009NE2LSATMA1
Width 5.35mm
Mount Type Surface
Series OptiMOS
Maximum Operating Temperature 150°C
Package Type TSDSON
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 100A
Maximum Drain Source Voltage Vds 25V
Maximum Drain Source Resistance Rds 900μΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 96W
Typical Gate Charge Qg @ Vgs 72nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1V

Key Features

  • The MOSFET features ultra-low Rds(on) of 900 microohms, ensuring high efficiency and low power loss.
  • It has a maximum power dissipation of 96 W suitable for demanding applications.
  • Operating temperature range spans from -55°C up to 150°C for robust reliability.
  • The device offers a forward voltage of 1 V and a typical gate charge of 72 nC at Vgs.
  • It supports automotive AEC Q101 qualification with an MSL1 rating and lead-free green packaging.
  • The compact TSDSON package measures 6.1 mm in length, 5.35 mm in width, and 1.1 mm in height.
  • Maximum gate-source voltage tolerance is -20 V to +20 V, enabling flexible driving conditions.
  • This surface-mount device is designed for high-density power conversions and voltage regulation in automotive and industrial applications.

Product Description

Infineon BSC009NE2LSATMA1 OptiMOS N-Channel MOSFET provides efficient and reliable power switching with a maximum drain current of 100 A and a drain-source voltage rating of 25 V. Packaged in an 8-pin TSDSON surface mount format, it is engineered to deliver high power density and energy efficiency for use in industrial, automotive, and electronic power management systems.

Its ultra-low on-resistance (900 μΩ) minimizes conduction losses, making it suitable for high-current applications such as DC-DC converters, motor drives, and power supplies. The device operates reliably from a minimum temperature of -55°C up to a maximum of 150°C, and its automotive AEC Q101 qualification ensures quality for automotive systems.

The MOSFET features a typical gate charge of 72 nC, supporting fast switching speeds necessary for modern power electronics. Its maximum power dissipation capability is rated at 96 W, making it capable of handling significant heat dissipation in compact designs.

The component comes in a lead-free, green package compliant with environmental standards and designed for surface mount technology on printed circuit boards. The 8-pin TSDSON package with compact dimensions allows for space-saving layouts in dense electronic assemblies.

Applications range widely across industrial power supplies, automotive voltage regulation modules, and consumer electronics power management. Its robust specification set supports designs requiring high current, low voltage drop, and fast switching with thermal stability.

The MOSFET features ultra-low Rds(on) of 900 microohms, ensuring high efficiency and low power loss. It has a maximum power dissipation of 96 W suitable for demanding applications. Operating temperature range spans from -55°C up to 150°C for robust reliability.

The device offers a forward voltage of 1 V and a typical gate charge of 72 nC at Vgs. It supports automotive AEC Q101 qualification with an MSL1 rating and lead-free green packaging. The compact TSDSON package measures 6.1 mm in length, 5.35 mm in width, and 1.1 mm in height.

Maximum gate-source voltage tolerance is -20 V to +20 V, enabling flexible driving conditions. This surface-mount device is designed for high-density power conversions and voltage regulation in automotive and industrial applications.

Explore more Infineon semiconductor devices and power MOSFETs on EnvMart for advanced electronic designs and power management solutions.

Infineon OptiMOS N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin TSDSON BSC009NE2LSATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 100 A.

This MOSFET has a maximum drain-source voltage rating of 25 V.

The operating temperature range spans from -55°C to 150°C.

It features an ultra-low on-resistance (Rds(on)) of 900 microohms.

The typical gate charge at Vgs is 72 nC.

The TSDSON package measures 6.1 mm in length, 5.35 mm in width, and 1.1 mm in height.

The maximum power dissipation capability is rated at 96 W.

The maximum gate-source voltage tolerance is from -20 V to +20 V.

Yes, it supports automotive AEC Q101 qualification, making it suitable for automotive systems.

This model uses surface mounting technology.

The forward voltage is 1 V.

It is suitable for applications including industrial power supplies, automotive voltage regulation modules, and consumer electronics power management.

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