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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 6.1mm |
| Model | BSC009NE2LSATMA1 |
| Width | 5.35mm |
| Mount Type | Surface |
| Series | OptiMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TSDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 25V |
| Maximum Drain Source Resistance Rds | 900μΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 96W |
| Typical Gate Charge Qg @ Vgs | 72nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Infineon BSC009NE2LSATMA1 OptiMOS N-Channel MOSFET provides efficient and reliable power switching with a maximum drain current of 100 A and a drain-source voltage rating of 25 V. Packaged in an 8-pin TSDSON surface mount format, it is engineered to deliver high power density and energy efficiency for use in industrial, automotive, and electronic power management systems.
Its ultra-low on-resistance (900 μΩ) minimizes conduction losses, making it suitable for high-current applications such as DC-DC converters, motor drives, and power supplies. The device operates reliably from a minimum temperature of -55°C up to a maximum of 150°C, and its automotive AEC Q101 qualification ensures quality for automotive systems.
The MOSFET features a typical gate charge of 72 nC, supporting fast switching speeds necessary for modern power electronics. Its maximum power dissipation capability is rated at 96 W, making it capable of handling significant heat dissipation in compact designs.
The component comes in a lead-free, green package compliant with environmental standards and designed for surface mount technology on printed circuit boards. The 8-pin TSDSON package with compact dimensions allows for space-saving layouts in dense electronic assemblies.
Applications range widely across industrial power supplies, automotive voltage regulation modules, and consumer electronics power management. Its robust specification set supports designs requiring high current, low voltage drop, and fast switching with thermal stability.
The MOSFET features ultra-low Rds(on) of 900 microohms, ensuring high efficiency and low power loss. It has a maximum power dissipation of 96 W suitable for demanding applications. Operating temperature range spans from -55°C up to 150°C for robust reliability.
The device offers a forward voltage of 1 V and a typical gate charge of 72 nC at Vgs. It supports automotive AEC Q101 qualification with an MSL1 rating and lead-free green packaging. The compact TSDSON package measures 6.1 mm in length, 5.35 mm in width, and 1.1 mm in height.
Maximum gate-source voltage tolerance is -20 V to +20 V, enabling flexible driving conditions. This surface-mount device is designed for high-density power conversions and voltage regulation in automotive and industrial applications.
Explore more Infineon semiconductor devices and power MOSFETs on EnvMart for advanced electronic designs and power management solutions.
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