Infineon OptiMOS 3 N-Channel MOSFET, 100 A Continuous Drain Current, 100 V Drain-Source Voltage BSC070N10NS3GATMA1

Infineon BSC070N10NS3GATMA1 OptiMOS 3 N-Channel MOSFET is a high-performance device designed for efficient power conversion and management in electronic systems. With a continuous drain current rating of 100 A and a maximum drain-source voltage of 100 V, this MOSFET is well-suited for industrial, automotive, and power management applications requiring robust and reliable switching components.

The enhancement mode channel provides fast switching with low conduction losses due to its 8.6 mΩ maximum drain-source resistance. Packaged in a compact 8-pin TDSON surface mount type, it enables space-saving circuit board designs without compromising thermal and electrical performance.

It delivers a maximum power dissipation rating of 156 W, making it capable of handling demanding power loads while operating reliably within a temperature range of -55°C to 150°C. The gate features a maximum voltage tolerance of ±20 V and a typical gate charge of 63 nC, facilitating fast switching frequencies and enhanced circuit efficiency.

Physical dimensions of 6.1 mm length, 5.35 mm width, and 1.1 mm height allow easy integration into printed circuit boards. This device does not carry automotive standard certification and is offered as a new condition product originating from India.

Infineon's OptiMOS family is known for combining efficiency, power density, and cost-effectiveness, making this MOSFET a choice component for industrial power supplies, motor drives, and energy management systems in commercial and manufacturing applications.

High continuous drain current rating of 100 A for efficient power handling. Maximum drain-source voltage of 100 V suitable for robust applications. Enhancement mode operation ensuring reliable switching performance. Compact 8-pin TDSON surface mount package for space-saving designs.

Low drain-source resistance of 8.6 mΩ minimizing conduction losses. High maximum power dissipation of 156 W supports heavy-duty usage. Wide operating temperature range from -55°C to 150°C for diverse environments. Typical gate charge of 63 nC supports high-speed switching.

Maximum gate-source voltage tolerance of ±20 V for gate protection. Physical dimensions facilitate easy PCB integration. Explore more Infineon OptiMOS MOSFETs and related semiconductor solutions on EnvMart for your electronic component sourcing requirements.