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Infineon OptiMOS P Type P-Channel MOSFET, 100 A, 30 V, Enhancement Mode, 8-Pin TDSON BSC030P03NS3GAUMA1

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Infineon OptiMOS P Type P-Channel MOSFET, 100 A, 30 V, Enhancement Mode, 8-Pin TDSON BSC030P03NS3GAUMA1

Name: Infineon OptiMOS P Type P-Channel MOSFET, 100 A, 30 V, Enhancement Mode, 8-Pin TDSON BSC030P03NS3GAUMA1
Brand: Infineon
SKU: 387073
Price: 1.44 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	1.1mm
Length	6.1mm
Model	BSC030P03NS3GAUMA1
Width	5.35mm
Mount Type	Surface
Series	OptiMOS P
Maximum Operating Temperature	150°C
Package Type	TDSON
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	Type P
Maximum Continuous Drain Current Id	100A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	4.6mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	125W
Typical Gate Charge Qg @ Vgs	140nC
Maximum Gate Source Voltage Vgs	-25, +25V
Forward Voltage Vf	-1.1V

Key Features

This MOSFET operates in enhancement mode for power switching applications.
It features a low 4.6 mΩ Rds(on) to minimize conduction losses.
The device supports a maximum power dissipation of 125 W, suitable for thermal demanding environments.
Typical gate charge of 140 nC ensures balanced switching speed and drive effort.
Rated for operation between -55°C and 150°C, enabling wide temperature performance.
Maximum gate-source voltage tolerance of ±25 V provides robust gate drive margins.
Its surface-mount 8-pin TDSON package allows effective heat transfer and easy PCB mounting.
Forward voltage during conduction is −1.1 V impacting synchronous rectification efficiency.

Product Description

Infineon BSC030P03NS3GAUMA1 is a P-Channel MOSFET designed for high current applications requiring reliable switching and power control. It offers a maximum continuous drain current of 100 A and a drain-source voltage of 30 V. The device is packaged in an 8-pin TDSON surface-mount format optimized for effective thermal management and compact PCB layouts.

This enhancement mode MOSFET features a low on-resistance of 4.6 mΩ, reducing conduction losses and enhancing efficiency in power distribution modules. It supports a maximum power dissipation of 125 W, which allows it to handle heavy-duty thermal loads reliably.

Designed to operate across a broad temperature range from -55°C up to 150°C, it is suitable for thermally stressed electronics in automotive, industrial, and power conversion systems. The device’s gate charge of 140 nC balances fast switching performance with manageable gate drive requirements. Its gate-source voltage tolerance of ±25 V ensures robustness against voltage spikes and variations during operation.

The forward conduction voltage is specified at -1.1 V, which affects the efficiency of synchronous rectification and freewheeling diode functions in motor drives and battery management systems. This MOSFET excels in high-current power distribution modules, synchronous rectification, motor low-side switching, and battery management applications.

This MOSFET is ideal for surface-mount applications requiring compact form factors and high thermal conductivity. Its robust electrical characteristics offer reliable performance in demanding environments spanning automotive to industrial uses.

Peak continuous current capability supports high-load switching and power management tasks. Device design optimizes conduction efficiency and switching speed to improve system reliability and energy efficiency. The 8-pin TDSON package provides a thermal pad and solder lands for effective heat dissipation and mechanical stability.

Operation under wide temperature and voltage tolerances supports diverse industrial applications. Suitable for synchronous rectification, power conversion, and motor drive low-side switching roles. Infineon OptiMOS technology underpins enhanced performance and durability.

Choose Infineon OptiMOS BSC030P03NS3GAUMA1 MOSFET for your high-current, thermally demanding power switching requirements. Explore related products in the discrete semiconductors category on EnvMart for comprehensive electronic component solutions.

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Frequently Asked Questions

The maximum continuous drain current for this model is 100 A.

This MOSFET has a maximum drain-source voltage rating of 30 V.

It features a low on-resistance of 4.6 mΩ, which helps minimize conduction losses.

The typical gate charge for this MOSFET is 140 nC, balancing switching speed and drive effort.

It is rated for operation between -55°C and 150°C, allowing for wide temperature performance.

This model is packaged in an 8-pin TDSON format, optimized for effective heat transfer and compact PCB layouts.

It supports a maximum power dissipation of 125 W, suitable for thermally demanding environments.

The forward conduction voltage is specified at -1.1 V, which impacts synchronous rectification efficiency.

This device features a P-channel type, designed for enhancement mode operation.

The dimensions of this model are 6.1 mm in length, 5.35 mm in width, and 1.1 mm in height.

It has a maximum gate-source voltage tolerance of ±25 V, providing robust gate drive margins.

This model is suitable for high-current power distribution modules, synchronous rectification, motor low-side switching, and battery management applications.