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onsemi Power NPN Transistor 17 A, 250 V, 150 W TO-264 3-Pin 2SC5200OTU

Category Power Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 46.9mm
Length 20.2mm
Model 2SC5200OTU
Width 5.2mm
Mount Type Through Hole
Series 2SC5200O
Maximum Operating Temperature 150°C
Package Type TO-264
Pin Count 3
Maximum Collector Emitter Voltage Vceo 250V
Minimum DC Current Gain hFE 35
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 250V
Maximum Power Dissipation Pd 150W
Maximum DC Collector Current Idc 17A
Transistor Configuration Single
Maximum Transition Frequency ft 30MHz

Key Features

  • Maximum DC collector current of 17 amperes for high current applications.
  • Collector-emitter voltage rating of 250 volts ensuring robust performance.
  • Power dissipation capacity of up to 150 watts to handle demanding loads.
  • TO-264 3-pin through-hole package for reliable mounting and heat dissipation.
  • NPN transistor configuration suitable for amplification and switching.
  • Minimum DC current gain (hFE) of 35 providing efficient signal amplification.
  • Maximum operating temperature rated at 150 degrees Celsius for thermal stability.
  • Pin count of 3 enabling standard transistor connections.

Product Description

onsemi 2SC5200OTU is a power NPN bipolar junction transistor designed for handling high current and voltage in electronic circuits. It supports a maximum DC collector current of 17 amperes and withstands a collector-emitter voltage of up to 250 volts. Its power dissipation rating of 150 watts makes it suitable for applications requiring substantial power handling.

This transistor utilizes a TO-264 3-pin through-hole package, which provides enhanced thermal management for stable operation under load. With a minimum DC current gain of 35, it enables effective amplification and switching in circuit designs.

The device operates reliably up to a maximum temperature of 150 degrees Celsius and features a maximum transition frequency of 30 MHz, making it suitable for various high-frequency applications.

Compact in size, the transistor measures 46.9 mm in height, 20.2 mm in length, and 5.2 mm in width. Its NPN polarity and single transistor configuration make it a versatile component in power electronics, industrial controls, and audio amplifiers.

Maximum DC collector current of 17 amperes for high current applications. Collector-emitter voltage rating of 250 volts ensuring robust performance. Power dissipation capacity of up to 150 watts to handle demanding loads.

TO-264 3-pin through-hole package for reliable mounting and heat dissipation. NPN transistor configuration suitable for amplification and switching. Minimum DC current gain (hFE) of 35 providing efficient signal amplification.

Maximum operating temperature rated at 150 degrees Celsius for thermal stability. Pin count of 3 enabling standard transistor connections. Maximum transition frequency of 30 MHz for high-frequency operation. Compact dimensions with height 46.9mm, length 20.2mm, and width 5.2mm.

This transistor is ideal for use in industrial electronics, power amplifiers, switching applications, and other circuits requiring high current and voltage handling capabilities. onsemi’s 2SC5200OTU combines robust electrical performance with a compact package to deliver reliable operation in demanding environments.

Explore the range of Power Transistors and discrete semiconductor components in the Electronics & Electricals category on EnvMart for comprehensive solutions.

onsemi Power NPN Transistor 17 A, 250 V, 150 W TO-264 3-Pin 2SC5200OTU
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Frequently Asked Questions

The maximum DC collector current for this model is 17 amperes, making it suitable for high current applications.

The collector-emitter voltage rating is 250 volts, ensuring robust performance in various applications.

This transistor has a power dissipation capacity of up to 150 watts, allowing it to handle demanding loads.

It utilizes a TO-264 3-pin through-hole package, which provides reliable mounting and effective heat dissipation.

The minimum DC current gain (hFE) is 35, which supports efficient signal amplification.

The maximum operating temperature is rated at 150 degrees Celsius, ensuring thermal stability during operation.

This model measures 46.9 mm in height, 20.2 mm in length, and 5.2 mm in width.

The maximum transition frequency is 30 MHz, making it suitable for high-frequency applications.

It features a single NPN transistor configuration, suitable for both amplification and switching.

The maximum emitter-base voltage (VEBO) is 5 volts, which is important for ensuring proper operation.

This transistor is ideal for use in industrial electronics, power amplifiers, and switching applications requiring high current and voltage handling capabilities.

The country of origin for this model is India.

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