Infineon OptiMOS FD N-Channel MOSFET 61 A Continuous Drain Current 250 V Drain Source Voltage 300 W Power IPP220N25NFDAKSA1

Infineon IPP220N25NFDAKSA1 OptiMOS FD N-Channel MOSFET delivers robust performance with a continuous drain current of 61 A and a maximum drain source voltage of 250 V in a compact 3-Pin TO-220 through-hole package. This device is engineered for high-performance applications requiring reliable and efficient power management solutions.

Featuring a low on-resistance of 22 milliohms, it ensures minimal power loss and increased operational efficiency. The maximum power dissipation capability is 300 W, allowing the MOSFET to function effectively in demanding thermal conditions. With a typical gate charge of 65 nC and forward voltage of 1.2 V, it supports efficient switching and conduction characteristics.

The MOSFET withstands harsh operating environments, functioning consistently from -55°C to +175°C. This temperature resilience makes it suitable for industrial automation, high-power motor drives, automotive power systems, and renewable energy inverters. Its robust package and thermal management design make it well-suited for power conversion circuits with hard commutation requirements.

Applications include power supplies for electronic devices, industrial machinery, and automotive power management, where efficient energy conversion and durability are critical. The device complies with RoHS and halogen-free standards, supporting eco-friendly electronic designs.

High current capability up to 61 A continuous drain current. Low on-resistance enhances energy efficiency. Supports operating temperature up to 175°C. Through-hole TO-220 package for effective thermal handling. Optimized for rugged, hard commutation applications.

Complies with RoHS and halogen-free regulations. Ideal for industrial automation, motor drives, automotive and renewable energy systems. Explore EnvMart for a wide range of Infineon semiconductor devices and MOSFETs to meet diverse industrial and electronic component needs.