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Infineon SIPMOS Type P-Channel MOSFET 30 A 60 V Enhancement Mode 3-Pin TO-252 SPD30P06PGBTMA1

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Infineon SIPMOS Type P-Channel MOSFET 30 A 60 V Enhancement Mode 3-Pin TO-252 SPD30P06PGBTMA1

Name: Infineon SIPMOS Type P-Channel MOSFET 30 A 60 V Enhancement Mode 3-Pin TO-252 SPD30P06PGBTMA1
Brand: Infineon
SKU: 386230
Price: 0.94 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	2.41mm
Length	6.73mm
Model	SPD30P06PGBTMA1
Width	6.22mm
Mount Type	Surface
Series	SIPMOS
Maximum Operating Temperature	175°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	30A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	75mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	125W
Typical Gate Charge Qg @ Vgs	32nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.3V

Key Features

Enhancement mode channel type for efficient switching performance.
Maximum continuous drain current of 30 A ensures high power handling.
Low maximum drain-source resistance of 75 mΩ reduces conduction losses.
Wide operating temperature range from -55°C to 175°C for robust applications.
Package designed for surface mount technology with 3-pin TO-252 form factor.
Typical gate charge of 32 nC at gate-source voltage enhances switching speed.
Maximum power dissipation rated at 125 W for reliable thermal management.
Automotive-standard AEC-Q101 qualification ensuring automotive industry compliance.

Product Description

Infineon SPD30P06PGBTMA1 is a SIPMOS® Type P-Channel MOSFET designed for high-performance switching applications. It is rated for a maximum continuous drain current of 30 A and a maximum drain-source voltage of 60 V. With an enhancement channel mode and a low Rds(on) of 75 mΩ, this MOSFET offers efficient conduction and switching capabilities. The 3-pin TO-252 package ensures easy surface mount integration in compact assemblies.

This device supports a wide operating temperature range from -55°C up to 175°C, making it suitable for demanding environments in telecommunications, eMobility, notebooks, DC/DC converters, and automotive applications. The component is compliant with the AEC-Q101 automotive standard, ensuring high reliability and quality required by the automotive industry.

The gate charge is typically 32 nC, which contributes to faster switching speeds and improved circuit efficiency. Maximum power dissipation is rated at 125 W, allowing robust thermal operation when coupled with adequate heat sinking or PCB design. Its forward voltage is -1.3 V, supporting energy-efficient conduction in switching circuits.

The physical dimensions of length 6.73 mm, width 6.22 mm, and height 2.41 mm provide a compact footprint for space-constrained designs. The device features Pb-free lead plating and full RoHS compliance, matching industry environmental standards.

This MOSFET is part of Infineon’s comprehensive SIPMOS portfolio, offering reliable power semiconductors that deliver enhanced performance and power density. It is ideal for use in industrial, automotive, and telecommunications electronics where efficient power management is critical.

Enhancement mode technology ensures superior switching performance. Fits surface mount assembly in TO-252 package. Qualified to AEC-Q101 for automotive safety and durability. Supports high power dissipation and wide temperature ranges.

Designed for applications requiring compact, high-efficiency power transistors. Explore more MOSFET devices and discrete semiconductors in the Electronics & Electricals category at EnvMart to find optimal solutions for your power electronics needs.