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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.57mm |
| Length | 10.36mm |
| Model | IPP65R190C7FKSA1 |
| Width | 15.95mm |
| Mount Type | Through Hole |
| Series | CoolMOS C7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 13A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 190mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 72W |
| Typical Gate Charge Qg @ Vgs | 23nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 0.9V |
Infineon IPP65R190C7FKSA1 CoolMOS C7 N-Channel MOSFET is a high-performance power transistor designed for efficient power switching and management in industrial, electronic, and power supply applications. It features a 13 A maximum continuous drain current and a high 700 V maximum drain-source voltage, making it suitable for demanding circuits requiring robust current handling and voltage control.
The device is housed in a 3-pin TO-220 through-hole package, facilitating easy mounting and integration on printed circuit boards. This MOSFET operates in enhancement mode with a low forward voltage of 0.9 V, contributing to reduced conduction losses and improved energy efficiency. The gate charge is minimal at 23 nC, which supports faster switching performance and reduces switching losses in power converters.
Engineered with the CoolMOS C7 technology, this MOSFET offers improved power density and increased thermal performance, allowing it to dissipate up to 72 W safely. It is specified for operation in an extensive temperature range from -55°C to 150°C, ensuring reliability in various industrial environments including HVAC systems, manufacturing equipment, power supplies, and renewable energy inverters.
This transistor features a maximum gate-source voltage rating of ±30 V enhancing its robustness against voltage spikes and transients, essential for stable operation in complex circuits. The dimensions (Length: 10.36 mm, Width: 15.95 mm, Height: 4.57 mm) ensure compatibility with standard industrial form factors.
Rated continuous drain current of 13 A for demanding loads. High voltage tolerance up to 700 V. Low forward voltage reduces conduction losses. Efficient switching with typical gate charge of 23 nC. Robust TO-220 package for easy mounting and heat dissipation.
Wide temperature range operation for reliability. Maximum power dissipation of 72 W to maintain performance. Gate-source voltage withstands ±30 V for protection against transients. Enhancement mode channel for controlled switching.
This Infineon CoolMOS C7 MOSFET is ideal for applications in power electronics, industrial power supplies, motor control systems, renewable energy inverters, and any system requiring high efficiency and voltage handling capabilities. Its reliable construction and proven technology deliver long-lasting performance for industrial, commercial, and laboratory environments.
Explore more Infineon power semiconductors and components suitable for a wide range of electronics and electrical projects on EnvMart.
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