Infineon OptiMOS 3 N-Channel MOSFET, 120 A, 120 V Enhancement Mode, 3-Pin TO-220 IPP041N12N3GXKSA1

Infineon IPP041N12N3GXKSA1 is a high-performance OptiMOS 3 N-Channel Power MOSFET designed for efficient power management in electronic circuits. Its 120 A maximum continuous drain current and 120 V maximum drain source voltage make it suitable for a wide range of industrial, automotive, and power electronics applications. The enhancement mode channel operation provides superior switching speed and minimal conduction losses.

The device is housed in a TO-220 package that supports through-hole mounting for robust mechanical and thermal connection. Its high maximum power dissipation of 300 W allows reliable operation under high load conditions. The MOSFET features a maximum gate source voltage of ±20 V and a typical gate charge of 158 nC, ensuring efficient drive and switching characteristics.

Operating across a broad temperature range from -55°C to 175°C, this MOSFET is engineered for demanding environments including industrial controls, motor drives, power supplies, and battery management systems. Its low forward voltage of 1.2 V enhances energy efficiency by minimizing losses during conduction.

Infineon offers a comprehensive portfolio of OptiMOS 3 MOSFETs renowned for best-in-class performance in power density and cost-efficiency. This part supports designs requiring high reliability without automotive-specific certification.

The device uses enhancement mode channel technology for efficient power handling. Maximum continuous drain current is rated at 120 A for high current applications. Maximum drain source voltage is 120 V, suitable for mid-voltage power circuits.

Package is TO-220, allowing through hole mounting and excellent thermal performance. Typical gate charge at Vgs is 158 nC, enabling fast switching. Maximum power dissipation is 300 W, supporting high power loads. Operating temperature range is from -55°C to 175°C for stable operation under harsh conditions.

Forward voltage drop is approximately 1.2 V, improving efficiency in conduction. With pin count of 3, it is designed for standard MOSFET applications.

This MOSFET is ideal for industrial, power management, automotive electronics, motor control, and renewable energy systems. Explore the Electronics & Electricals > Discrete Semiconductors > MOSFET category at EnvMart for related solutions and parts from Infineon and other leading manufacturers.