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Toshiba Small Signal PNP Transistor 150 mA, 50 V, 3-Pin TO-236 2SA1162-GR,LF(T

Category Bipolar Transistors Brand Toshiba Condition New

Specifications

Country of Origin Thailand
Brand Toshiba
Height 1.26mm
Length 2.9mm
Model 2SA1162-GR,LF(T
Width 2.5mm
Mount Type Surface
Series 2SA1162
Maximum Operating Temperature 125°C
Package Type TO-236
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 70
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -50V
Maximum Power Dissipation Pd 150mW
Maximum DC Collector Current Idc 150mA
Transistor Configuration Single
Maximum Transition Frequency ft 80MHz

Key Features

  • Operates at maximum DC collector current of 150 mA.
  • Maximum collector emitter voltage is 50 V for robust switching.
  • Compact surface mount TO-236 package with 3 pins for easy PCB integration.
  • Transistor configuration is single PNP type suitable for small signal amplification.
  • Maximum power dissipation is 150 mW ensuring reliable operation under load.
  • Minimum DC current gain (hFE) of 70 for efficient amplification.
  • Supports a maximum transition frequency (ft) of 80 MHz for high-speed applications.
  • Maximum operating temperature is 125°C for durability in industrial conditions.

Product Description

Toshiba 2SA1162-GR,LF(T is a high-quality small signal PNP bipolar junction transistor designed for reliable performance in electronic circuit applications. This transistor supports a maximum DC collector current of 150 mA and withstands collector emitter voltages up to 50 V, making it ideal for low power switching and amplification tasks.

The device is housed in a compact 3-pin TO-236 surface mount package that simplifies PCB assembly and saves board space. Its single PNP transistor configuration ensures compatibility with a range of circuit designs requiring current amplification and switching.

With a minimum DC current gain (hFE) of 70 and a transition frequency (ft) reaching 80 MHz, it enables efficient and fast signal processing in communication, control, and amplification circuits.

The transistor can safely dissipate up to 150 mW of power and operates at temperatures up to 125°C, making it suitable for industrial, commercial, and consumer electronics with moderate heat environments.

Compact dimensions of 2.9 mm length, 2.5 mm width, and 1.26 mm height allow it to fit into tight spaces on modern circuit boards, making it a versatile component for various applications including power supplies, amplifiers, and signal switching modules.

Operates at maximum DC collector current of 150 mA. Maximum collector emitter voltage is 50 V for robust switching. Compact surface mount TO-236 package with 3 pins for easy PCB integration. Transistor configuration is single PNP type suitable for small signal amplification.

Maximum power dissipation is 150 mW ensuring reliable operation under load. Minimum DC current gain (hFE) of 70 for efficient amplification. Supports a maximum transition frequency (ft) of 80 MHz for high-speed applications.

Maximum operating temperature is 125°C for durability in industrial conditions. Dimensions: 2.9 mm length, 2.5 mm width, and 1.26 mm height to fit compact circuits.

This Toshiba transistor is ideal for use in industrial automation, consumer electronics, telecommunications, and embedded system designs. Its surface mount design reduces manufacturing complexity while maintaining performance quality.

Explore more Toshiba Bipolar Transistors and other discrete semiconductors on EnvMart for all your electronic component sourcing needs.

Toshiba Small Signal PNP Transistor 150 mA, 50 V, 3-Pin TO-236 2SA1162-GR,LF(T
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