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Infineon SIPMOS Type P-Channel MOSFET, 2.9 A, 60 V Enhancement, 4-Pin SOT-223 BSP613PH6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 40mm |
| Model | BSP613PH6327XTSA1 |
| Width | 40mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.9A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 130mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 10.8W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.1V |
Key Features
- 60 V drain-source voltage rating suitable for medium-voltage switching applications.
- 2.9 A maximum continuous drain current for sustained loads.
- Enhancement mode Type P channel MOSFET designed for surface mounting.
- Low maximum drain-source resistance of 130 milliohms reduces conduction losses.
- Typical gate charge of 22 nC simplifies gate drive sizing and improves switching efficiency.
- Maximum power dissipation of 10.8 W supports moderate power handling.
- Wide operating temperature range from -55°C to 175°C for harsh industrial and automotive environments.
- Compliant with AEC‑Q101 automotive standard ensuring reliability in automotive electronics.
Product Description
Infineon BSP613PH6327XTSA1 SIPMOS Type P-Channel MOSFET is an enhancement-mode transistor optimized for surface-mount power switching applications requiring moderate current handling and voltage tolerance. With a maximum drain-source voltage of 60 V and a continuous drain current rating of 2.9 A, this device supports steady load delivery in automotive and industrial systems.
The device features a maximum Rds(on) of 130 milliohms to minimize conduction losses during operation. Its typical gate charge of 22 nanocoulombs makes gate drive circuitry design simpler, enhancing switching performance and energy efficiency. The maximum power dissipation rating of 10.8 W allows reliable sustained power handling under demanding conditions.
This MOSFET operates reliably across a temperature range from -55°C to 175°C and meets automotive-grade AEC-Q101 specifications, making it suitable for automotive electronics, industrial control circuits, and battery management applications. The 4-pin SOT-223 surface-mount package supports efficient PCB layout and standard reflow soldering processes.
Applications include load switching in automotive electronics, compact power regulators, polarity and reverse-current protection, and control in high-temperature environments. The typical forward voltage of approximately 1.1 V is critical for accurate power loss and thermal design considerations.
60 V drain-source voltage suitable for medium-voltage scenarios. 2.9 A continuous drain current enabling steady load operations. SOT-223 4-pin package supports space-conscious surface mounting. Low Rds(on) for improved conduction efficiency and reduced heat generation.
Wide operating temperature ensures reliability in harsh environments. Compliance with automotive AEC-Q101 standard guarantees quality and durability.
Infineon’s BSP613PH6327XTSA1 MOSFET is a dependable component choice for industrial, automotive, and commercial electronics projects requiring robust power switching solutions. Explore related MOSFET products and solutions on EnvMart for your power-switching needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.9 A, allowing it to handle sustained loads effectively.
It has a maximum drain-source voltage rating of 60 V, suitable for medium-voltage switching applications.
The typical gate charge is 22 nanocoulombs, which simplifies gate drive sizing and improves switching efficiency.
The maximum power dissipation for this unit is 10.8 W, supporting moderate power handling capabilities.
The dimensions of the SOT-223 package are 1.5 mm in height, 40 mm in length, and 40 mm in width.
This MOSFET operates reliably across a wide temperature range from -55°C to 175°C, suitable for harsh environments.
It features a Type P channel design, optimized for enhancement mode operation.
The maximum drain-source resistance (Rds(on)) is 130 milliohms, which helps reduce conduction losses during operation.
Yes, it is compliant with the AEC-Q101 automotive standard, ensuring reliability in automotive electronics applications.
It is suitable for load switching in automotive electronics, compact power regulators, and control in high-temperature environments.
The typical forward voltage is approximately 1.1 V, which is important for power loss and thermal design considerations.
The maximum gate-source voltage for this MOSFET is -20 V to +20 V, which defines the voltage limits for the gate operation.
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