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Infineon SIPMOS Type P-Channel MOSFET, 2.9A Continuous Drain Current, 60V Drain Source Voltage BSP613PH6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 40mm |
| Model | BSP613PH6327XTSA1 |
| Width | 40mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.9A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 130mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 10.8W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Designed for surface-mount power switching in automotive and industrial environments.
- Supports high-temperature operation from -55°C to 175°C.
- Maximum power dissipation of 10.8 watts for sustained performance.
- Low 130mΩ maximum drain-source resistance reduces conduction losses.
- Enhancement-mode P-channel transistor with 22nC typical gate charge.
- Compatible with standard SMT reflow processes using SOT-223 package.
- Meets automotive AEC-Q101 standard for reliable automotive electronics.
- Ideal for load switching, battery management, and reverse-current protection.
Product Description
Infineon BSP613PH6327XTSA1 SIPMOS Type P-Channel MOSFET is a surface-mount enhancement-mode transistor designed to support demanding automotive and industrial power switching applications. It features a 60V maximum drain-source voltage and supports a continuous drain current of 2.9A. Constructed in a compact 4-pin SOT-223 package, it enables efficient board layouts and is compatible with common SMT reflow soldering processes.
This MOSFET delivers a low maximum drain-source resistance of 130mΩ, which minimizes conduction losses and improves energy efficiency during operation. With a typical gate charge of 22nC, it simplifies gate drive design and reduces switching losses, making it suitable for compact power regulators and high-temperature industrial control circuits.
The device supports operation in extreme temperature ranges from -55°C to 175°C, making it ideal for automotive applications and industrial environments that demand high reliability under thermal stress. Its maximum power dissipation rating of 10.8W allows sustained power handling for moderate current applications.
Designed for automotive and industrial load switching applications. Meet AEC-Q101 automotive reliability standards. SOT-223 package supports surface-mount assembly. Enhancement-mode P-channel for efficient power control.
Low Rds(on) reduces power dissipation. Wide operating temperature range of -55°C to 175°C. Typical gate charge of 22nC for ease of gate drive design.
This MOSFET is widely used in battery management systems, polarity and reverse-current protection schemes, and compact power regulators. Its rugged design and compliance with automotive standards make it highly reliable for electronic modules requiring moderate current switching in harsh environments.
Explore more automotive-grade MOSFETs and discrete semiconductor solutions at EnvMart for your industrial and automotive electronics design needs.
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Frequently Asked Questions
The maximum continuous drain current for the BSP613PH6327XTSA1 is 2.9A.
This model can handle a maximum drain-source voltage of 60V.
The operating temperature range for this MOSFET is from -55°C to 175°C.
The BSP613PH6327XTSA1 is packaged in a SOT-223 format.
The maximum power dissipation rating for this model is 10.8W.
The typical gate charge for this MOSFET is 22nC.
The dimensions of the SOT-223 package are 1.5mm in height, 40mm in length, and 40mm in width.
Yes, this MOSFET meets the AEC-Q101 automotive reliability standard.
This model features a P-channel type.
The maximum drain-source resistance is 130mΩ.
This MOSFET is suitable for load switching, battery management, and reverse-current protection applications.
The maximum gate-source voltage for this model is -20V to +20V.
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