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Infineon OptiMOS 3 N-Channel MOSFET, 120 A Continuous Drain Current, 60 V Drain Source Voltage, TO-220 IPP032N06N3GXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 15.95mm |
| Length | 10.36mm |
| Model | IPP032N06N3GXKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 3.2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 188W |
| Typical Gate Charge Qg @ Vgs | 124nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Maximum continuous drain current of 120 amps allows robust conduction.
- Rated for 60 volts maximum drain to source voltage to ensure reliability.
- Enhancement mode channel with a low on-resistance Rds(on) of 3.2 milliohms for efficiency.
- Compact TO-220 through-hole package with 3 pins simplifies PCB mounting.
- Typical gate charge of 124 nanocoulombs supports fast switching in SMPS designs.
- Maximum power dissipation of 188 watts to handle high power loads.
- Wide operating temperature range from -55°C to 175°C ensures durability in harsh environments.
- Maximum gate-source voltage rating ±20 volts for robust gate drive protection.
Product Description
Infineon IPP032N06N3GXKSA1 is a high-performance OptiMOS 3 series N-Channel MOSFET designed for advanced power management applications, providing excellent efficiency and power density. It features a continuous drain current capability of 120 A at a maximum drain-source voltage of 60 V, making it suitable for use in power supplies, DC/DC converters, and industrial electronics.
The device is housed in a TO-220 3-pin through-hole package, facilitating easy integration into both prototype and production PCBs. The enhancement mode channel with a low Rds(on) of 3.2 milliohms ensures minimal conduction losses, contributing to improved thermal performance and energy savings.
Key electrical characteristics include a typical gate charge of 124 nanocoulombs, supporting fast switching speeds critical in SMPS (Switched Mode Power Supply) designs. The MOSFET supports operation over a wide temperature range from -55°C to 175°C, ensuring reliable performance in demanding industrial and commercial environments.
The device includes a rugged gate-source voltage rating of ±20 volts, enhancing protection against voltage spikes during switching. Its forward voltage of 1.2 volts aligns well with switching applications needing tight control and efficiency.
Mechanically, the MOSFET measures 15.95 mm in height, 10.36 mm in length, and 4.57 mm in width, suitable for compact designs where space is limited. The power dissipation rating of 188 watts allows for handling substantial power loads in demanding applications.
Infineon’s OptiMOS 3 series MOSFETs are designed to meet and exceed the energy efficiency and power density requirements of modern electronic systems, delivering superior performance for automotive, industrial, and consumer electronics. This product does not carry automotive standards but offers robust performance for general industrial purposes.
The product is lead-free and RoHS compliant, enhancing environmental compatibility. Maximum continuous drain current of 120 A allows robust conduction. 60 V drain-source voltage rating supports medium voltage applications.
Low Rds(on) of 3.2 milliohms for reduced conduction losses. TO-220 package ensures ease of mounting and good thermal dissipation. Wide operating temperature range from -55°C to 175°C. Enhancement mode improves control for switching applications.
Suitable for power supplies, DC/DC converters, and industrial electronics. Lead-free plating meets environmental standards. Explore other high-performance MOSFETs and power components at EnvMart for your next design or production requirement.
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Frequently Asked Questions
The maximum continuous drain current for this model is 120 A.
This MOSFET is rated for a maximum drain-source voltage of 60 V.
It has a low on-resistance Rds(on) of 3.2 milliohms, which helps in reducing conduction losses.
The typical gate charge is 124 nanocoulombs, which supports fast switching in applications such as SMPS.
The dimensions of the TO-220 package are 15.95 mm in height, 10.36 mm in length, and 4.57 mm in width.
It operates over a wide temperature range from -55°C to 175°C, making it suitable for harsh environments.
The maximum power dissipation for this MOSFET is rated at 188 watts.
The maximum gate-source voltage rating is ±20 volts, providing robust protection during operation.
This model is suitable for power supplies, DC/DC converters, and various industrial electronics applications.
This device features a 3-pin configuration, which simplifies PCB mounting.
The forward voltage is rated at 1.2 volts, aligning well with switching applications.
Yes, this MOSFET is lead-free and RoHS compliant, enhancing its environmental compatibility.
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