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DiodesZetex NPN Bipolar Transistor, 4 A Collector Current, 150 V Collector-Emitter Voltage, TO-92 Package ZTX855

Category Bipolar Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 17.58mm
Length 4.77mm
Model ZTX855
Width 2.41mm
Mount Type Through Hole
Series ZTX
Maximum Operating Temperature 200°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 150V
Minimum DC Current Gain hFE 35
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 250V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 1.58W
Maximum DC Collector Current Idc 4A
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
Diodes Inc APT13003LZTR-G1 NPN Transistor, 800 mA, 700 V, 3-Pin TO-92Brand DiodesZetex

Key Features

  • Maximum DC collector current of 4 amperes for robust performance.
  • Collector-emitter voltage rating up to 150 volts ensuring reliability under high voltage conditions.
  • Compact TO-92 package with 3 pins for ease of mounting and circuit integration.
  • High maximum operating temperature range from -55°C to 200°C for versatile applications.
  • Transition frequency of 100 MHz supporting efficient high-frequency switching.
  • NPN transistor configuration designed for general purpose switching and amplification.
  • Maximum power dissipation of 1.58 watts to handle moderate power loads.
  • Automotive standard compliant (AEC-Q101) ensuring quality and durability.

Product Description

DiodesZetex ZTX855 NPN Bipolar Transistor is a robust semiconductor device designed for various industrial, automotive, and electronic applications. It features a maximum DC collector current of 4 A and a collector-emitter voltage rating of 150 V, making it suitable for medium power switching and amplification tasks. Packaged in a TO-92 through hole format with three pins, it provides an easy-to-mount solution for PCB assembly.

This transistor supports operating temperatures from -55°C up to 200°C, ensuring reliable performance in harsh and demanding environments. Its transition frequency of 100 MHz allows efficient operation in high-frequency circuits, beneficial in signal processing and switching circuits.

The device complies with Automotive standard AEC-Q101, confirming its suitability for automotive electronics. Its maximum power dissipation of 1.58 W is adequate for medium power applications, balancing thermal management with performance.

Typical applications include industrial control systems, automotive electronics, consumer electronic devices, and general-purpose amplifiers or switches. The NPN configuration supports common transistor circuit designs requiring current amplification and switching.

Its compact size with dimensions 4.77 mm length, 2.41 mm width, and 17.58 mm height enables efficient PCB layout in space-constrained designs. The through-hole mounting type facilitates prototyping and production assembly processes.

Maximum DC collector current of 4 amperes for robust performance. Collector-emitter voltage rating up to 150 volts ensuring reliability under high voltage conditions. Compact TO-92 package with 3 pins for ease of mounting and circuit integration.

High maximum operating temperature range from -55°C to 200°C for versatile applications. Transition frequency of 100 MHz supporting efficient high-frequency switching. NPN transistor configuration designed for general purpose switching and amplification.

Maximum power dissipation of 1.58 watts to handle moderate power loads. Automotive standard compliant (AEC-Q101) ensuring quality and durability. Compact dimensions: length 4.77 mm, width 2.41 mm, height 17.58 mm for space saving design.

Explore more semiconductor products or browse additional DiodesZetex transistors on EnvMart for industrial and automotive electronics solutions.

DiodesZetex NPN Bipolar Transistor, 4 A Collector Current, 150 V Collector-Emitter Voltage, TO-92 Package ZTX855
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Frequently Asked Questions

The maximum DC collector current for this model is 4 amperes.

The collector-emitter voltage rating is up to 150 volts, ensuring reliability under high voltage conditions.

It comes in a TO-92 package type with a 3-pin configuration for ease of mounting and circuit integration.

The ZTX855 operates within a temperature range of -55°C to 200°C, suitable for various applications.

This transistor has a transition frequency of 100 MHz, supporting efficient high-frequency switching.

The maximum power dissipation for this model is 1.58 watts, adequate for medium power applications.

It complies with the Automotive standard AEC-Q101, ensuring quality and durability for automotive applications.

The dimensions are 4.77 mm in length, 2.41 mm in width, and 17.58 mm in height.

The minimum DC current gain (hFE) for this model is 35.

The maximum emitter-base voltage (VEBO) is 6 volts.

Typical applications include industrial control systems, automotive electronics, consumer electronic devices, and general-purpose amplifiers or switches.

It uses an NPN transistor configuration designed for general-purpose switching and amplification.

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