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Infineon OptiMOS N-Channel MOSFET 80 A 75 V Enhancement Mode 3-Pin TO-220 IPP80N08S2L07AKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 15.95mm |
| Length | 10.36mm |
| Model | IPP80N08S2L07AKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | OptiMOS |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 75V |
| Maximum Drain Source Resistance Rds | 6.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 183nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 900mV |
Key Features
- Features a 3-pin TO-220 through-hole mounting package providing ease of installation.
- Employs enhancement mode channel configuration for superior switching performance.
- Boasts an ultra-low 6.8 milliohm on-resistance improving conduction efficiency.
- Capable of dissipating 300 W power with a high operating temperature limit of 175°C.
- Qualified under automotive standard AEC-Q101 ensuring robust automotive-grade reliability.
- Designed for high-frequency applications with a typical gate charge of 183 nC at Vgs.
- Operates safely within a gate-source voltage range of -20 V to +20 V.
- Compact dimensions with a length of 10.36 mm, height of 15.95 mm, and width of 4.57 mm.
Product Description
Infineon IPP80N08S2L07AKSA1 OptiMOS N-Channel MOSFET delivers powerful switching capabilities with a maximum continuous drain current of 80 A and a maximum drain-source voltage of 75 V. It uses enhancement mode channel technology and comes in a durable 3-pin TO-220 package designed for through-hole mounting, promoting easy integration into varied electronic assemblies.
This MOSFET is engineered to support high power dissipation up to 300 W and operation in harsh thermal environments up to 175°C, making it suitable for automotive and industrial applications. It carries the AEC-Q101 qualification, reflecting its compliance with stringent automotive standards for quality and reliability.
The device exhibits an ultra-low 6.8 mΩ on-state resistance, which reduces conduction losses, and a typical gate charge of 183 nC to support efficient switching at high frequencies. Its gate-source voltage range of -20 V to +20 V ensures flexible and reliable control in power circuits.
Compact physical dimensions (15.95 mm height, 10.36 mm length, 4.57 mm width) aid in space-constrained designs. It is ideal for applications in power management, voltage regulation, industrial motor drives, and automotive electronics where high efficiency and thermal robustness are critical.
Features a 3-pin TO-220 through-hole mounting package providing ease of installation. Employs enhancement mode channel configuration for superior switching performance. Boasts an ultra-low 6.8 milliohm on-resistance improving conduction efficiency.
Capable of dissipating 300 W power with a high operating temperature limit of 175°C. Qualified under automotive standard AEC-Q101 ensuring robust automotive-grade reliability. Designed for high-frequency applications with a typical gate charge of 183 nC at Vgs.
Operates safely within a gate-source voltage range of -20 V to +20 V. Compact dimensions with a length of 10.36 mm, height of 15.95 mm, and width of 4.57 mm.
This Infineon OptiMOS MOSFET suits diverse professional environments including automotive electronics, industrial automation, power conversion systems, and consumer electronics design. Explore our power electronics category to discover more highly reliable semiconductor products to optimize your applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 80 A.
It can handle a maximum drain-source voltage of 75 V.
The on-resistance is ultra-low at 6.8 mΩ, which improves conduction efficiency.
This MOSFET is capable of dissipating up to 300 W of power.
The operating temperature range is from -55°C to 175°C.
The typical gate charge at Vgs is 183 nC.
It comes in a 3-pin TO-220 through-hole mounting package.
It is qualified under the automotive standard AEC-Q101.
The dimensions are 10.36 mm in length, 15.95 mm in height, and 4.57 mm in width.
The gate-source voltage range is from -20 V to +20 V.
It is suitable for applications in power management, voltage regulation, industrial motor drives, and automotive electronics.
This model utilizes an N-channel configuration with enhancement mode technology.
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