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onsemi N-Channel Power MOSFET, 276 A, 60 V Enhancement Mode, 8-Pin SO-8FL Package NTMFS5C604NLT1G

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onsemi N-Channel Power MOSFET, 276 A, 60 V Enhancement Mode, 8-Pin SO-8FL Package NTMFS5C604NLT1G

Name: onsemi N-Channel Power MOSFET, 276 A, 60 V Enhancement Mode, 8-Pin SO-8FL Package NTMFS5C604NLT1G
Brand: onsemi
SKU: 380990
Price: 2.03 USD
Availability: InStock

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Category Power MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.05mm
Length	6.1mm
Model	NTMFS5C604NLT1G
Width	5.1mm
Mount Type	Surface
Series	NTMFS
Maximum Operating Temperature	150°C
Package Type	SO-8FL
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	276A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	1.7mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	167W
Typical Gate Charge Qg @ Vgs	120nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.2V

Key Features

This MOSFET features a low drain-source resistance of 1.7 milliohms ensuring efficient conduction.
The device has a maximum power dissipation of 167 watts suitable for high power applications.
Encapsulated in an SO-8FL package with 8 pins for surface mounting on PCBs.
Typical gate charge is 120 nanocoulombs at Vgs for gate drive efficiency.
Operates within a temperature range of -55°C to 150°C for broad environmental tolerance.
Includes a maximum gate-source voltage rating of ±20 volts.
The device length is 6.1 mm, width is 5.1 mm, and height is 1.05 mm, supporting compact electronics design.
Designed for power semiconductor applications in industrial and electronic equipment.

Product Description

onsemi NTMFS5C604NLT1G is a high-performance N-Channel Power MOSFET designed for demanding power switching applications. With a maximum continuous drain current of 276A and a drain-source voltage rating of 60V, it is engineered to handle robust power loads efficiently.

Its enhancement channel mode and low Rds(on) of 1.7 milliohms contribute to reduced conduction losses, improving overall energy efficiency in electronic devices. Encased in a surface-mount 8-Pin SO-8FL package, it facilitates compact and reliable PCB mounting.

The MOSFET sustains a maximum power dissipation of 167W, making it suitable for a wide range of industrial, commercial, and electronic applications requiring high power and fast switching capabilities.

Typical gate charge of 120nC ensures reliable gate driving performance, and the device tolerates gate-source voltages up to ±20V, enabling robust control in circuit operation. It supports operation in extreme environmental conditions, from -55°C up to 150°C maximum operating temperature.

This MOSFET features a low drain-source resistance of 1.7 milliohms ensuring efficient conduction. The device has a maximum power dissipation of 167 watts suitable for high power applications. Encapsulated in an SO-8FL package with 8 pins for surface mounting on PCBs.

Typical gate charge is 120 nanocoulombs at Vgs for gate drive efficiency. Operates within a temperature range of -55°C to 150°C for broad environmental tolerance. Includes a maximum gate-source voltage rating of ±20 volts.

The device length is 6.1 mm, width is 5.1 mm, and height is 1.05 mm, supporting compact electronics design. Designed for power semiconductor applications in industrial and electronic equipment.

This product is ideal for use in industrial power management, electronic components manufacturing, and other semiconductor-related applications. It delivers fast switching, reliable operation, and high current capacity to improve system performance and energy efficiency.

Browse EnvMart for advanced Power MOSFETs and related semiconductor devices to meet your precise engineering requirements.