Infineon HEXFET Type P-Channel MOSFET 31 A 55 V Enhancement 3-Pin TO-263 IRF5305STRLPBF

Infineon IRF5305STRLPBF HEXFET Type P-Channel MOSFET is a powerful electronic component tailored for demanding power management and high-efficiency applications in industrial, automotive, and electronic systems. With a maximum continuous drain current rating of 31 amperes and a drain-source voltage capacity of 55 volts, it ensures robust performance in switching and control circuits.

This enhancement-mode P-channel MOSFET is housed in a compact TO-263 package designed for surface mounting, allowing seamless integration into printed circuit boards. The device features a low maximum drain-source resistance (Rds(on)) of 60 milliohms, enhancing energy efficiency by minimizing conduction losses.

It is capable of dissipating up to 110 watts of power with a temperature operating range from -55°C to +175°C, making it suitable for harsh environments and industrial conditions requiring high reliability. The typical gate charge is 63 nanocoulombs at the rated gate-source voltage, while the maximum gate-source voltage ranges between -20 and +20 volts, ensuring stable gate control.

Applications include motor controls, power supply circuits, energy management solutions, and electronic switching devices. Its compact physical size (10.67 mm length, 9.65 mm width, and 4.83 mm height) aids in dense electronic assemblies.

Infineon's HEXFET series stands out for combining high performance with reliability, making IRF5305STRLPBF an ideal selection for professionals designing electronic circuits demanding efficient power control.

Supports a maximum continuous drain current of 31 amperes. Maximum drain-source voltage is rated at 55 volts. Equipped with a robust TO-263 surface mount package. Enhancement-mode device with low drain-source resistance of 60 milliohms.

Capable of dissipating up to 110 watts of power efficiently. Operates reliably from -55°C to a maximum of 175°C. Typical gate charge of 63 nanocoulombs at gate-source voltage. Maximum gate-source voltage ranges from -20 to +20 volts.

Low forward voltage drop of -1.3 volts improves efficiency. Compact dimensions with 10.67 mm length, 9.65 mm width, and 4.83 mm height. Explore the full range of Infineon MOSFET components on EnvMart for reliable and efficient semiconductor solutions.