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Infineon Isolated HEXFET 2 N-Channel MOSFET 3 A 50 V Enhancement 8-Pin SOIC IRF7103TRPBF
Specifications
| Country of Origin | Philippines |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 5mm |
| Model | IRF7103TRPBF |
| Width | 4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 50V |
| Maximum Drain Source Resistance Rds | 200mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 12nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
| Transistor Configuration | Isolated |
Key Features
- Low on-resistance (Rds(on)) of 200 milliohms for improved efficiency.
- Supports maximum continuous drain current of 3 amperes for robust power handling.
- Enhancement mode with isolated dual transistor configuration.
- Wide operating temperature range from -55°C to +150°C for reliability.
- Compact surface-mount SOIC package optimizes PCB space.
- Typical gate charge of 12 nanocoulombs allowing fast switching.
- Gate-source voltage range of -20 V to +20 V for flexible control.
- Maximum power dissipation of 2 watts for thermal management.
Product Description
Infineon IRF7103TRPBF Isolated HEXFET 2 N-Channel MOSFET is engineered for reliable and efficient switching applications in power electronics. Rated for a maximum continuous drain current of 3 A and drain-source voltage of 50 V, this device excels in power management and automation sectors. The dual isolated transistor configuration enables efficient circuit integration while the enhancement mode ensures flexible operational control.
This MOSFET operates across a wide temperature spectrum from -55°C to 150°C, making it suitable for demanding industrial and electrical environments. It features a low on-resistance of 200 milliohms, minimizing power loss and heat generation during operation. The typical gate charge of 12 nC supports high switching speeds useful in PWM motor control and switching power supplies.
Packaged in an 8-pin SOIC surface mount form factor, the IRF7103TRPBF ensures ease of assembly on standard PCBs while optimizing space usage. The device’s gate-source voltage range of -20V to +20V allows flexible control strategies for precise switching.
Low on-resistance (Rds(on)) of 200 milliohms for improved efficiency. Supports maximum continuous drain current of 3 amperes for robust power handling. Enhancement mode with isolated dual transistor configuration. Wide operating temperature range from -55°C to +150°C for reliability.
Compact surface-mount SOIC package optimizes PCB space. Typical gate charge of 12 nanocoulombs allowing fast switching. Gate-source voltage range of -20 V to +20 V for flexible control. Maximum power dissipation of 2 watts for thermal management.
Forward voltage drop of 1.2 volts ensures efficient conduction. Dimensions: length 5 mm, width 4 mm, height 1.5 mm.
This MOSFET is commonly used in power supply designs, motor drive controls, switching power supplies, and automation systems requiring dependable, fast switching components. It supports integration in industrial, electrical, and automation manufacturing applications.
Infineon offers this device built in the Philippines and designed to industrial-grade standards. Explore more industrial semiconductor devices on EnvMart for your power component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3 amperes.
This MOSFET has a maximum drain-source voltage rating of 50 volts.
The typical gate charge for this model is 12 nanocoulombs.
The dimensions of this unit are 5 mm in length, 4 mm in width, and 1.5 mm in height.
It operates within a temperature range from -55°C to 150°C.
The on-resistance (Rds(on)) is 200 milliohms.
This MOSFET is packaged in an 8-pin SOIC surface mount configuration.
The maximum power dissipation for this model is 2 watts.
The gate-source voltage range is from -20 V to +20 V.
The forward voltage drop for this MOSFET is 1.2 volts.
This model features 2 elements per chip.
The channel type of this device is N-channel.
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