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Infineon HEXFET N-Channel MOSFET 18A 200V Enhancement Mode Surface Mount 3-Pin TO-263 IRF640NSTRLPBF
Specifications
| Country of Origin | Korea |
|---|---|
| Brand | Infineon |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRF640NSTRLPBF |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 18A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 150mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 67nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- N-channel configuration supports enhancement mode operation optimized for power control.
- Maximum continuous drain current of 18A suitable for high current circuits.
- Drain-source voltage rating of 200V ensures reliability in demanding environments.
- Surface mount TO-263 package facilitates easy installation and effective heat dissipation.
- Low drain-source on-resistance (150mΩ) reduces conduction losses and improves efficiency.
- Typical gate charge of 67nC supports fast switching performance.
- Wide operating temperature range from -55°C to 175°C allows use in harsh conditions.
- Maximum power dissipation of 150W enables effective handling of thermal loads.
Product Description
Infineon IRF640NSTRLPBF HEXFET N-Channel MOSFET is a high-performance discrete semiconductor device designed for power management and electronic control applications. Featuring an enhancement mode operation and a maximum continuous drain current of 18A, it ensures efficient current flow regulation in circuits requiring dependable switching performance.
Housed in a TO-263 surface mount package, this MOSFET offers convenient mounting and superior heat management. The 200V maximum drain-source voltage and low Rds(on) value of 150mΩ minimize energy losses, supporting applications requiring high voltage and current handling capabilities.
Capable of dissipating up to 150W of power, it sustains operation in demanding industrial, automotive, and renewable energy sectors. Its wide temperature tolerance from -55°C up to 175°C broadens its usage in various environments, including harsh conditions in industrial automation and motor control systems.
Key electrical parameters like a typical gate charge of 67nC and maximum gate-source voltage of ±20V support rapid switching and robust gate control. The compact 3-pin configuration simplifies circuit integration.
N-channel MOSFET with enhancement mode configuration. Maximum continuous drain current: 18A to support powerful switching. Drain-source voltage rating of 200V suitable for diverse applications. Low Rds(on) at 150mΩ to reduce conduction losses.
TO-263 surface mount package for straightforward PCB assembly and thermal management. Gate charge optimized at 67nC for efficient switching speed. Wide operating temperature range: -55°C to +175°C for industrial use. High power dissipation up to 150W.
This component is optimized for power management in automotive electronics, industrial power supplies, motor control circuits, renewable energy systems, and high-frequency power inverter designs. With its reliable performance and robust specifications, the IRF640NSTRLPBF MOSFET is a critical device in modern electronic systems requiring effective energy conversion and precise control.
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Frequently Asked Questions
The maximum continuous drain current for this model is 18A, making it suitable for high current circuits.
This MOSFET has a drain-source voltage rating of 200V, ensuring reliability in demanding environments.
The IRF640NSTRLPBF is housed in a TO-263 surface mount package, which facilitates easy installation and effective heat dissipation.
The typical gate charge for this MOSFET is 67nC, which supports fast switching performance.
This model operates within a wide temperature range from -55°C to 175°C, allowing use in harsh conditions.
The maximum power dissipation for this MOSFET is 150W, enabling effective handling of thermal loads.
The low drain-source on-resistance (Rds(on)) is 150mΩ, which helps reduce conduction losses and improve efficiency.
This model features a 3-pin configuration, simplifying circuit integration.
The channel type of this MOSFET is N-channel, designed for enhancement mode operation.
The maximum gate-source voltage ratings for this model are ±20V, which supports robust gate control.
This MOSFET is optimized for power management in automotive electronics, industrial power supplies, motor control circuits, and renewable energy systems.
The forward voltage of this model is 1.3V, which is relevant for its operation in circuits.
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