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STMicroelectronics MDmesh K5 SuperMESH5 N-Channel MOSFET, 14 A, 800 V, 190 W, TO-220, 3-Pin STP15N80K5

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STMicroelectronics MDmesh K5 SuperMESH5 N-Channel MOSFET, 14 A, 800 V, 190 W, TO-220, 3-Pin STP15N80K5

Name: STMicroelectronics MDmesh K5 SuperMESH5 N-Channel MOSFET, 14 A, 800 V, 190 W, TO-220, 3-Pin STP15N80K5
Brand: STMicroelectronics
SKU: 379550
Price: 5.51 USD
Availability: InStock

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Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	15.75mm
Length	10.4mm
Model	SuperMESH5
Width	4.6mm
Mount Type	Through Hole
Series	MDmesh K5, SuperMESH5
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	14A
Maximum Drain Source Voltage Vds	800V
Maximum Drain Source Resistance Rds	375mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	190W
Typical Gate Charge Qg @ Vgs	32nC
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	1.5V

Key Features

This MOSFET features an enhancement mode channel for precise switching control.
Maximum power dissipation is rated at 190 W ensuring robust performance.
Low maximum drain-source resistance of 375 mΩ enables efficient conduction.
Typical gate charge is 32 nC at Vgs, supporting fast switching operations.
Wide operating temperature range from -55°C to 150°C enables use in diverse environments.
Gate-source voltage tolerance is -30 to +30 V for reliable gate control.
Compact physical dimensions include a height of 15.75 mm, length 10.4 mm, and width 4.6 mm.
Package type TO-220 allows for through-hole mounting and efficient heat dissipation.

Product Description

STMicroelectronics STP15N80K5 is a high-performance N-channel MDmesh K5 SuperMESH5 MOSFET designed for power electronic applications requiring high current and voltage endurance. Operating with a maximum continuous drain current of 14 A and a drain-source voltage rating of 800 V, this device is suited for switching and amplifier circuits demanding robust electrical characteristics.

The device employs enhancement mode channel operation, providing reliable and precise control for efficient switching. Its maximum power dissipation of 190 W ensures that it can sustain demanding workloads in industrial and commercial power electronics.

With a low Rds(on) of 375 mΩ, the STP15N80K5 minimizes conduction losses, thereby improving overall system efficiency. The typical gate charge of 32 nC facilitates fast switching speeds, beneficial in applications such as power converters, motor drives, and power supplies.

Operational temperature range spans from -55°C to 150°C, allowing use in harsh thermal environments encountered in automotive, industrial, and HVAC sectors. The device also supports gate-source voltages from -30 V to +30 V, providing flexibility and reliability in gate drive conditions.

Measuring 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width, the TO-220 package supports through-hole mount technology and effective heat dissipation to aid in thermal management.

This MOSFET is ideal for industrial, automotive, and consumer electronics applications. Use cases include power management circuits, switching regulators, and DC-DC converters. Its rugged construction and electrical characteristics make it reliable for extended operational life.

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