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DiodesZetex Small Signal NPN Bipolar Transistor 100 mA 45 V 3-Pin DFN BC847BFA-7B

Category Bipolar Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 0.4mm
Length 0.65mm
Model BC847BFA-7B
Width 0.85mm
Mount Type Surface
Series BC847BFA
Maximum Operating Temperature 150°C
Package Type DFN
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 435mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Supports maximum DC collector current of 100 mA.
  • Offers maximum collector-emitter voltage of 45 V.
  • Constructed in compact DFN surface mount package with 3 pins.
  • Features a high minimum DC current gain (hFE) of 200 for efficient amplification.
  • Operates within temperature range from -55°C to 150°C.
  • Provides maximum power dissipation of 435 mW for reliable performance.
  • Designed with NPN transistor polarity for standard circuit compatibility.
  • Fulfills automotive AEC-Q101 standard for quality and reliability.

Product Description

DiodesZetex BC847BFA-7B is a small signal NPN bipolar transistor designed for use in a variety of electronic circuits requiring moderate collector current and voltage ratings. It supports a maximum DC collector current of 100 mA, making it suitable for signal amplification applications. With a maximum collector-emitter voltage of 45 V and collector-base voltage of 50 V, it is capable of stable operation in low to medium voltage circuits.

The transistor is housed in a 3-pin Dual Flat No-lead (DFN) surface mount package that enables compact PCB designs and efficient heat dissipation. It features a high minimum DC current gain (hFE) of 200, offering good amplification performance. The maximum power dissipation rating is 435 mW, which ensures reliable operation within thermal limits.

This device is designed to operate reliably over a temperature range of -55°C to 150°C, making it suitable for automotive and industrial environments. It is compliant with the AEC-Q101 automotive standard which certifies its robustness in demanding applications.

Key physical dimensions include a length of 0.65 mm, width of 0.85 mm, and height of 0.4 mm. The transistor has a maximum transition frequency (fT) of 100 MHz, which makes it effective in switching and amplification at radio frequencies.

The BC847BFA-7B is a single transistor configuration with NPN polarity, widely used in electronic designs for signal processing and switching. Its surface mount design allows for automated assembly and compact electronic device manufacturing.

Maximum DC collector current: 100 mA. Maximum collector-emitter voltage: 45 V. Surface mount DFN 3-pin package. Minimum DC current gain (hFE) of 200. Operational temperature range from -55°C to +150°C. Power dissipation up to 435 mW.

Automotive AEC-Q101 standard compliant. Compact dimensions: 0.65 mm x 0.85 mm x 0.4 mm. Maximum transition frequency 100 MHz.

This transistor is suitable for industrial, automotive, and general electronics applications, including low power amplification, switching circuits, and signal processing modules. It is ideal for engineers designing compact and reliable circuitry with stringent performance and quality requirements.

Explore more Bipolar Transistors from DiodesZetex in our Electronics & Electricals category for diverse application needs.

DiodesZetex Small Signal NPN Bipolar Transistor 100 mA 45 V 3-Pin DFN BC847BFA-7B
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

It supports a maximum collector-emitter voltage of 45 V.

The dimensions are 0.65 mm in length, 0.85 mm in width, and 0.4 mm in height.

It operates within a temperature range from -55°C to 150°C.

The minimum DC current gain (hFE) is 200, providing efficient amplification.

The maximum power dissipation rating is 435 mW.

It is housed in a compact DFN surface mount package with 3 pins.

The maximum transition frequency is 100 MHz, suitable for switching and amplification applications.

This transistor complies with the AEC-Q101 automotive standard for quality and reliability.

It is designed with NPN transistor polarity for standard circuit compatibility.

The maximum collector-base voltage is 50 V.

It is suitable for low power amplification, switching circuits, and signal processing modules in various electronic designs.

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