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Infineon OptiMOS N-Channel MOSFET, 57 A, 30 V Enhancement Mode, 8-Pin TDSON Package BSC052N03LSATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 6.1mm |
| Model | BSC052N03LSATMA1 |
| Width | 5.35mm |
| Mount Type | Surface |
| Series | OptiMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 57A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 7.2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 28W |
| Typical Gate Charge Qg @ Vgs | 12nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.9V |
Key Features
- Equipped with an 8-pin TDSON package enabling surface mount applications.
- Maximum power dissipation rated at 28 W ensuring efficient thermal management.
- Ultra-low Rds(on) resistance of 7.2 mΩ for minimized conduction losses.
- Operating temperature range from -55°C to 150°C for robust industrial use.
- Typical gate charge of 12 nC at Vgs improves switching performance.
- Maximum gate-source voltage of ±20 V provides high reliability and protection.
- Compact dimensions of 6.1 mm length, 5.35 mm width, and 1.1 mm height optimize PCB space.
- Designed for enhancement mode N-channel operation suitable for power management circuits.
Product Description
Infineon's BSC052N03LSATMA1 is a high-performance OptiMOS™ N-Channel MOSFET featuring a maximum continuous drain current of 57 A and a drain-source voltage of 30 V, designed for enhancement mode operation. Packaged in a compact 8-pin TDSON surface-mount package, it effectively addresses power density and energy efficiency demands in advanced electronic circuits.
This MOSFET delivers ultra-low on-resistance (7.2 mΩ) enabling reduced conduction losses and improved thermal performance, supporting a maximum power dissipation of 28 W. It operates reliably over a broad temperature range from -55°C to 150°C, meeting demanding industrial and automotive specifications, although this specific model is not Automotive AEC Q101 qualified.
Key electrical characteristics include a typical gate charge of 12 nC at gate-source voltage, enabling fast switching, and a maximum gate-source voltage rating of ±20 V ensuring device protection and durability. The device has a low forward voltage of 0.9 V which facilitates efficient power conversion.
The compact physical dimensions (6.1 mm length, 5.35 mm width, and 1.1 mm height) allow for high-density PCB layouts, making it suitable for space-constrained applications in computing, telecommunications, and power management.
8-pin TDSON surface-mount package for ease of integration. High continuous drain current capacity of 57 A for robust power handling. Designed for low gate charge and efficient switching characteristics. Extended temperature operation from -55°C to 150°C supports harsh environments.
Optimized for energy-efficient power management in electronic systems. Infineon's OptiMOS family provides solutions for voltage regulation and energy savings.
Ideal for industrial, construction, laboratory, communication equipment, and HVAC applications that require efficient and reliable power semiconductor components. This MOSFET does not include specific certifications and complies with standard safety through design and manufacturing.
Explore more Infineon semiconductor products at EnvMart to find suitable solutions for your power management needs.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 57 A.
It comes in an 8-pin TDSON surface-mount package.
The maximum drain-source voltage rating is 30 V.
This MOSFET operates over a temperature range from -55°C to 150°C.
The typical gate charge at gate-source voltage is 12 nC.
The maximum power dissipation is rated at 28 W.
It has an ultra-low on-resistance of 7.2 mΩ, which helps minimize conduction losses.
The forward voltage is 0.9 V, facilitating efficient power conversion.
The dimensions are 6.1 mm in length, 5.35 mm in width, and 1.1 mm in height.
It uses an enhancement mode N-channel design.
The maximum gate-source voltage rating is ±20 V.
This MOSFET is manufactured in India.
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