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| Country of Origin | Thailand |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 5mm |
| Model | IRF7495TRPBF |
| Width | 4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7.3A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 22mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Infineon IRF7495TRPBF is an advanced HEXFET N-Channel MOSFET designed for power electronics applications requiring reliable, efficient switching with low conduction losses. This device supports a maximum continuous drain current of 7.3 A and a maximum drain-source voltage of 100 V, operating in enhancement mode for controlled switching functionality.
The MOSFET is packaged in an 8-pin SOIC surface mount form factor, enabling compact PCB layouts and ease of integration in modern electronic designs. The maximum power dissipation rating of 2.5 W allows for effective thermal management in typical industrial, consumer electronics, automotive, and power supply contexts.
With a low typical gate charge of 34 nC and gate-source voltage tolerance of ±20 V, this component allows for efficient drive control and robust protection against voltage transients. It operates reliably over a temperature range of -55°C to 150°C, making it suitable for demanding environments.
The package dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height, supporting high-density circuit designs. Manufactured in Thailand, this product adheres to stringent quality control to ensure consistent performance.
HEXFET technology minimizes conduction losses for system efficiency. Enhancement mode for precise electronic switching. Surface mount SOIC 8-pin package for compact integration. Robust operating temperature range from -55°C to 150°C.
Low gate charge improves switching speed and power efficiency. Maximum power dissipation of 2.5 W enables safe thermal performance. Maximum drain-source resistance of 22 mΩ ensures low on-state losses. Peak forward voltage is 1.3 V for effective conduction.
This MOSFET is ideal for industrial and commercial electronics including power supplies, motor control, automotive electronics, and consumer devices requiring reliable switching components. EnvMart categorizes it under discrete semiconductors with a focus on MOSFETs, targeting engineers and designers requiring premium semiconductor components for their projects.
Explore more Infineon semiconductor and power management products at EnvMart to find solutions tailored to your electronic application needs.
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