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Infineon HEXFET N-Channel MOSFET 7.3 A 100 V Enhancement Mode Surface Mount SOIC 8-Pin IRF7495TRPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin Thailand
Brand Infineon
Height 1.5mm
Length 5mm
Model IRF7495TRPBF
Width 4mm
Mount Type Surface
Series HEXFET
Maximum Operating Temperature 150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 7.3A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 22mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.5W
Typical Gate Charge Qg @ Vgs 34nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.3V

Key Features

  • Featuring HEXFET technology for low conduction losses and high efficiency.
  • Enhancement mode N-channel device suitable for power switching.
  • Maximum power dissipation is 2.5 W enabling reliable operation.
  • Wide operating temperature range from -55°C to 150°C.
  • Low typical gate charge of 34 nC for efficient gate control.
  • Maximum gate-source voltage of ±20 V protects against voltage spikes.
  • Compact dimensions with 5 mm length, 4 mm width, and 1.5 mm height.
  • Designed for surface mount applications with SOIC package.

Product Description

Infineon IRF7495TRPBF is an advanced HEXFET N-Channel MOSFET designed for power electronics applications requiring reliable, efficient switching with low conduction losses. This device supports a maximum continuous drain current of 7.3 A and a maximum drain-source voltage of 100 V, operating in enhancement mode for controlled switching functionality.

The MOSFET is packaged in an 8-pin SOIC surface mount form factor, enabling compact PCB layouts and ease of integration in modern electronic designs. The maximum power dissipation rating of 2.5 W allows for effective thermal management in typical industrial, consumer electronics, automotive, and power supply contexts.

With a low typical gate charge of 34 nC and gate-source voltage tolerance of ±20 V, this component allows for efficient drive control and robust protection against voltage transients. It operates reliably over a temperature range of -55°C to 150°C, making it suitable for demanding environments.

The package dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height, supporting high-density circuit designs. Manufactured in Thailand, this product adheres to stringent quality control to ensure consistent performance.

HEXFET technology minimizes conduction losses for system efficiency. Enhancement mode for precise electronic switching. Surface mount SOIC 8-pin package for compact integration. Robust operating temperature range from -55°C to 150°C.

Low gate charge improves switching speed and power efficiency. Maximum power dissipation of 2.5 W enables safe thermal performance. Maximum drain-source resistance of 22 mΩ ensures low on-state losses. Peak forward voltage is 1.3 V for effective conduction.

This MOSFET is ideal for industrial and commercial electronics including power supplies, motor control, automotive electronics, and consumer devices requiring reliable switching components. EnvMart categorizes it under discrete semiconductors with a focus on MOSFETs, targeting engineers and designers requiring premium semiconductor components for their projects.

Explore more Infineon semiconductor and power management products at EnvMart to find solutions tailored to your electronic application needs.

Infineon HEXFET N-Channel MOSFET 7.3 A 100 V Enhancement Mode Surface Mount SOIC 8-Pin IRF7495TRPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 7.3 A.

The maximum drain-source voltage is 100 V.

It has a maximum power dissipation rating of 2.5 W.

This model has dimensions of 5 mm in length, 4 mm in width, and 1.5 mm in height.

The typical gate charge is 34 nC.

It operates over a temperature range from -55°C to 150°C.

The maximum gate-source voltage is ±20 V.

This MOSFET is packaged in an 8-pin SOIC surface mount form factor.

The maximum drain-source resistance is 22 mΩ.

It is an N-channel MOSFET.

This model is suitable for power supplies, motor control, automotive electronics, and consumer devices requiring reliable switching components.

This product is manufactured in Thailand.

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