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Infineon HEXFET Type P-Channel MOSFET, 11 A Continuous Drain Current, 55 V Drain Source Voltage, Enhancement IRFR9024NTRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | IRFR9024NTRPBF |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 175mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 38W |
| Typical Gate Charge Qg @ Vgs | 19nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.6V |
Key Features
- Maximum continuous drain current of 11 amperes supports high-current applications.
- Drain-source voltage rating of 55 volts ensures device reliability under load.
- Low on-resistance of 175 milliohms reduces power loss and improves efficiency.
- Enhancement mode channel provides effective switching performance.
- Maximum power dissipation of 38 watts allows handling of significant thermal loads.
- Wide operating temperature range from -55°C to +150°C suits varied environments.
- Surface mount TO-252 package facilitates easy PCB integration.
- Gate voltage tolerance from -20 V to +20 V offers flexible control design.
Product Description
Infineon IRFR9024NTRPBF HEXFET Type P-Channel MOSFET is a high-performance semiconductor device designed for efficient switching and control in electronic circuits. Featuring a maximum continuous drain current of 11 amperes and a drain-source voltage rating of 55 volts, this MOSFET is built to handle demanding electrical conditions while maintaining reliable operation.
The device uses advanced HEXFET technology with an enhancement mode channel that optimizes switching efficiency and reduces conduction losses due to its low drain-source resistance of 175 milliohms. Its maximum power dissipation rating of 38 watts enables it to manage heat effectively during high load applications.
Encapsulated in a 3-pin TO-252 surface mount package, the MOSFET allows straightforward integration on printed circuit boards, suitable for compact electronic assemblies. The device supports gate voltages from -20 V to +20 V, providing flexibility in gate drive design and control.
Its temperature operating range from -55°C to +150°C makes it reliable for industrial, automotive, and consumer electronics applications that require robust thermal performance. Maximum continuous drain current of 11 A for high-power applications.
Drain-source voltage up to 55 V for enhanced device reliability. Low RDS(on) of 175 mΩ reduces energy loss during conduction. Enhancement mode construction for efficient switching. 38 W power dissipation supports thermal stability.
Wide operating temperature range (-55°C to 150°C) for varied environments. TO-252 surface-mount package enables compact PCB design. Gate voltage tolerance from -20 V to +20 V ensures flexible gate control.
This MOSFET is suited for power supply circuits, motor control drives, DC-DC converters, load switching, and industrial automation systems requiring robust and efficient semiconductor switching components.
Explore the reliable performance characteristics of Infineon MOSFETs and browse similar semiconductor components in our Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 11 amperes, making it suitable for high-current applications.
This MOSFET has a drain-source voltage rating of 55 volts, ensuring reliable operation under load.
The low on-resistance value is 175 milliohms, which reduces power loss and improves efficiency during operation.
It has a maximum power dissipation rating of 38 watts, allowing it to handle significant thermal loads effectively.
The operating temperature range for this MOSFET is from -55°C to +150°C, making it suitable for varied environments.
This model is encapsulated in a 3-pin TO-252 surface mount package, facilitating easy PCB integration.
The gate voltage tolerance for this MOSFET ranges from -20 V to +20 V, providing flexibility in gate drive design.
This model has a pin count of 3, which is standard for its package type.
This device uses a Type P channel, which is characteristic of P-Channel MOSFETs.
The typical gate charge for this model at Vgs is 19 nC, which affects switching performance.
This model is suited for applications such as power supply circuits, motor control drives, DC-DC converters, and load switching.
This MOSFET belongs to the HEXFET series, known for its efficient switching capabilities.
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