Infineon Isolated OptiMOS 2 Series N-Channel MOSFET 20 V, 950 mA, 600 mΩ Rds on, 6-Pin SC-88 BSD235NH6327XTSA1

This device operates at a maximum drain-source voltage of 20 V and supports a continuous drain current of 950 mA, making it ideal for moderate load switching tasks.

The MOSFET features a low on-resistance of 600 mΩ which minimizes conduction losses, ensuring energy-efficient performance under operation. The device has a typical gate charge of 0.32 nC, enabling rapid switching with reduced drive energy, suitable for compact and efficient system designs.

Housed in a compact 6-pin SC-88 surface-mount package with dimensions of approximately 2 mm length, 1.25 mm width, and 0.8 mm height, it is adaptable for tight PCB layouts. The transistor configuration is isolated with 2 elements per chip, providing flexibility for dual-channel switching applications. Its enhancement mode operation supports reliable switching in body control modules, gate drivers, and secondary-side power stages.

This MOSFET is qualified to the rigorous AEC-Q101 standard, underscoring its automotive suitability. It can reliably operate within a temperature range of -55 °C to 150 °C, allowing placement near heat-generating components with appropriate thermal management considerations to dissipate up to 500 mW of power.

Applications include supply-rail switching in automotive modules, load control in body control units, and compact power management solutions in small form-factor SMD designs. It requires drive circuits capable of handling gate-source voltages between -12 V and +12 V to avoid damage to the gate oxide.

This Infineon MOSFET provides a balance of performance, size, and automotive reliability, making it highly suitable for modern power management and switching needs in automotive electronics and compact industrial modules.

Maximum continuous drain current of 950 mA supports modest load requirements. 20 V maximum drain-source voltage ensures safe low-voltage switching. Low 600 mΩ drain-source resistance reduces conduction losses. Typical gate charge of 0.32 nC enables fast, low energy switching.

Surface-mount 6-pin SC-88 package offers compact footprint for PCB layouts. Operates over a wide temperature range from -55 °C to 150 °C for thermal endurance. Isolated transistor configuration suitable for paired switching channels.

500 mW power dissipation rating allows sustained operation under continuous load. AEC-Q101 qualification ensures automotive-grade reliability and testing. Enhancement mode N-Channel device optimized for automotive power and body control units.

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