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Infineon SIPMOS Type P-Channel MOSFET, 150mA Continuous Drain Current, 60V Drain Source Voltage BSS84PWH6327XTSA1

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Infineon SIPMOS Type P-Channel MOSFET, 150mA Continuous Drain Current, 60V Drain Source Voltage BSS84PWH6327XTSA1

Name: Infineon SIPMOS Type P-Channel MOSFET, 150mA Continuous Drain Current, 60V Drain Source Voltage BSS84PWH6327XTSA1
Brand: Infineon
SKU: 378853
Price: 0.07 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	800μm
Length	2mm
Model	BSS84PWH6327XTSA1
Width	1.25mm
Mount Type	Surface
Series	SIPMOS
Maximum Operating Temperature	150°C
Package Type	SC-70
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	150mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	25Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	300mW
Typical Gate Charge Qg @ Vgs	1nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.12V

Key Features

Maximum continuous drain current of 150mA supports low-power electronic circuits.
Maximum drain-source voltage rating of 60V enables moderate voltage switching applications.
Enhancement mode channel operation for efficient switching.
Compact 3-pin SC-70 surface-mount package measuring 2mm x 1.25mm.
Maximum drain-source resistance (Rds) of 25Ω minimizes conduction losses.
Wide operating temperature range from -55°C to 150°C suitable for harsh environments.
Typical gate charge of 1nC allows fast switching with low energy consumption.
Supports automotive AEC-Q101 standard for high reliability in vehicle electronics.

Product Description

Infineon BSS84PWH6327XTSA1 SIPMOS Type P-Channel MOSFET is a high-quality semiconductor device ideal for automotive and industrial electronic applications requiring reliable low-current switching. It features a maximum continuous drain current of 150mA and a drain-source voltage of 60V in an enhancement mode configuration that operates efficiently across a broad temperature range from -55°C to 150°C.

Housed in a compact SC-70 package with a 3-pin surface-mount design, the device fits high-density printed circuit boards that demand small footprint components. Its low maximum drain-source resistance of 25Ω minimizes power loss during operation, and a typical gate charge of 1nC facilitates fast switching with reduced energy consumption.

This MOSFET is rated for maximum power dissipation of 300mW allowing it to handle continuous use in demanding thermal conditions. It supports automotive reliability through compliance with the AEC-Q101 standard, making it suitable for control modules, sensor interfaces, battery management systems, telematics protection switching, and compact consumer electronics.

Maximum continuous drain current of 150mA. 60V maximum drain-source voltage. Enhancement channel mode for efficient operation. Compact SC-70 3-pin surface-mount package. 25Ω maximum drain-source resistance. Wide temperature range from -55°C to 150°C.

Typical gate charge 1nC for fast switching. AEC-Q101 automotive standard compliant. 300mW power dissipation capacity.

This MOSFET is widely applicable in automotive electronic controls, industrial load switching, level shifting in sensor circuits, battery management, telematics units, and compact power circuitry where reliable low current switching is essential.

Explore more automotive and industrial MOSFET components on EnvMart to find the best fit for your semiconductor needs.