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Infineon OptiMOS 2 N-Channel MOSFET 1.4 A 30 V Enhancement Mode 3-Pin SOT-23 BSS316NH6327XTSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 900μm
Length 2.9mm
Model BSS316NH6327XTSA1
Width 1.3mm
Mount Type Surface
Series OptiMOS 2
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 1.4A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 280mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 500mW
Typical Gate Charge Qg @ Vgs 0.6nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 800mV
N-Channel MOSFET Transistor, 1.4 A, 30 V, 3-Pin SOT-23 Infineon BSS316NBrand Infineon

Key Features

  • Operates in enhancement mode for efficient switching.
  • Low on-resistance ensures reduced conduction losses.
  • Compact SOT-23 package fits tight PCB layouts.
  • Typical gate charge of 0.6 nC enables fast switching transitions.
  • Supports wide operating temperatures from -55°C to 150°C.
  • Max power dissipation of 500 mW suits compact thermal designs.
  • Rated for automotive use with AEC‑Q101 qualification.
  • Gate-to-source voltage rating of ±20 V allows robust drive signal margin.

Product Description

Infineon BSS316NH6327XTSA1 OptiMOS 2 series is an N-Channel MOSFET designed for low-voltage power management in compact electronic devices. Featuring a maximum continuous drain current of 1.4 A and drain-source voltage of 30 V, this transistor utilizes an enhancement mode channel suitable for efficient power switching and control in automotive and industrial applications.

The device is housed in a miniature 3-pin SOT-23 package with a low profile height of 0.9 mm and a small footprint of 2.9 mm by 1.3 mm, making it ideal for space-constrained PCB layouts. Its low on-resistance (280 mΩ) minimizes conduction losses, thus improving overall efficiency.

With a typical gate charge of 0.6 nC at gate-source voltage, the MOSFET supports fast switching transitions, critical for efficient power conversion and load switching tasks. The maximum power dissipation of 500 mW allows operation within tight thermal budgets.

Rated to operate from -55°C to 150°C, this component is qualified to the automotive standard AEC-Q101, ensuring reliability in harsh environments. The gate-source voltage rating of ±20 V allows wide drive margins, suitable for robust circuit designs.

This MOSFET is highly suitable for point-of-load converters in battery-powered systems, automotive load switching, motor-drive gate control in small actuators, and densely populated circuit boards requiring efficient power management.

Operates in enhancement mode for effective power switching. Compact SOT-23 surface mount package. Meets automotive reliability with AEC-Q101 qualification. Wide temperature range operation ensures versatility. Fast switching enabled by low gate charge.

Low on-resistance reduces power losses during conduction. Suitable for automotive and industrial applications. Supports compact PCB designs with minimal footprint. Explore more Infineon discrete semiconductors and MOSFETs in the electronics and electricals category at EnvMart for your industrial and commercial design needs.

Infineon OptiMOS 2 N-Channel MOSFET 1.4 A 30 V Enhancement Mode 3-Pin SOT-23 BSS316NH6327XTSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 1.4 A.

This MOSFET has a maximum drain-source voltage rating of 30 V.

The typical gate charge for this model is 0.6 nC at gate-source voltage.

The maximum drain-source resistance (Rds) is 280 mΩ, which helps minimize conduction losses.

The SOT-23 package has a height of 900 μm, a length of 2.9 mm, and a width of 1.3 mm.

It operates within a temperature range of -55°C to 150°C.

This model is qualified to the automotive standard AEC-Q101, ensuring reliability in automotive applications.

The maximum power dissipation for this MOSFET is 500 mW.

This device features an enhancement mode N-channel configuration.

The gate-to-source voltage rating is ±20 V, providing a robust drive signal margin.

This MOSFET uses a surface mount type for installation.

The country of origin for this model is India.

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