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Infineon SIPMOS Type P-Channel MOSFET, 1 A, 100 V Enhancement, 4-Pin SOT-223 BSP322PH6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.6mm |
| Length | 6.5mm |
| Model | BSP322PH6327XTSA1 |
| Width | 3.5mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 800mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.8W |
| Typical Gate Charge Qg @ Vgs | 12.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.84V |
Key Features
- Operates with a maximum drain source voltage of 100 V suitable for high-voltage switching.
- Supports continuous drain current of 1 ampere for low to moderate power applications.
- Compact 4-pin SOT-223 surface-mount package for space-saving PCB layouts.
- High power dissipation capacity of 1.8 W ensures stable operation under load.
- Typical gate charge of 12.4 nC allows predictable gate-drive performance.
- Wide operating temperature range from -55°C up to 150°C for harsh environments.
- Low drain-source resistance (Rds) of 800 mΩ minimizes conduction losses.
- Constructed as an enhancement mode P-channel MOSFET with reliable automotive-standard AEC-Q101 certification.
Product Description
The Infineon BSP322PH6327XTSA1 is a SIPMOS Series P-Channel MOSFET specifically engineered for high-voltage and surface-mounted power switching solutions. This device supports a continuous drain current of 1 A and can withstand a maximum drain-source voltage of 100 V, making it ideal for a range of automotive and industrial applications including load switching, polarity protection circuits, and power management in battery-operated systems.
Its compact SOT-223 4-pin surface-mount package measures 6.5 x 3.5 x 1.6 mm, facilitating efficient PCB footprint design. With a maximum power dissipation of 1.8 watts and a low Rds(on) of 800 mΩ, it offers efficient conduction and thermal management. The device’s gate charge of 12.4 nanocoulombs enables predictable and efficient gate drive control.
The BSP322PH6327XTSA1 operates across a wide temperature span from -55°C to +150°C, suitable for harsh thermal environments, and complies with automotive industry standard AEC-Q101, ensuring high reliability for automotive electronics. Its maximum gate-source voltage rating of ±20 V provides a safe margin for gate drive voltages.
This MOSFET is ideal for use in applications requiring compact, efficient, and robust surface-mount power switching components such as automotive electronic modules, high-voltage polarity-protection circuits, power management devices for batteries, reverse-current prevention in DC rails, and compact power conversion stages.
Operates with 1 A maximum continuous drain current. Handles up to 100 V maximum drain-source voltage. Designed for surface mount in a 4-pin SOT-223 package. Maximum power dissipation rated at 1.8 W. Typical gate charge of 12.4 nC supports efficient switching.
Wide temperature tolerance from -55°C to 150°C. Low 800 mΩ drain-source resistance reduces power loss. Meets AEC-Q101 automotive standard for reliability. Explore further Infineon SIPMOS MOSFETs and other semiconductor products on EnvMart for your industrial and automotive electronics solutions.
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Frequently Asked Questions
The maximum drain-source voltage for this model is 100 V, making it suitable for high-voltage switching applications.
It supports a continuous drain current of 1 A, which is appropriate for low to moderate power applications.
This MOSFET comes in a compact 4-pin SOT-223 surface-mount package with dimensions of 6.5 mm in length, 3.5 mm in width, and 1.6 mm in height.
The maximum power dissipation capacity is rated at 1.8 W, ensuring stable operation under load conditions.
The typical gate charge for this model is 12.4 nC, which supports predictable gate-drive performance.
It operates over a wide temperature range from -55°C to +150°C, making it suitable for harsh environments.
The low drain-source resistance (Rds) is 800 mΩ, which helps minimize conduction losses during operation.
Yes, it complies with the AEC-Q101 automotive standard, ensuring high reliability for automotive electronics.
The maximum gate-source voltage rating is ±20 V, providing a safe margin for gate drive voltages.
This model features a P-channel type, specifically designed as an enhancement mode MOSFET.
It is suitable for automotive and industrial applications such as load switching, polarity protection circuits, and power management in battery-operated systems.
The forward voltage for this model is 0.84 V, which is relevant for its performance in various applications.
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