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Infineon SIPMOS Type P-Channel MOSFET, 1.9A Continuous Drain Current, 60V Drain Source Voltage, 4-Pin BSP170PH6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.6mm |
| Length | 6.5mm |
| Model | BSP170PH6327XTSA1 |
| Width | 3.5mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.9A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 300mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.8W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.1V |
Key Features
- This MOSFET supports a maximum continuous drain current of 1.9 A.
- It features a maximum drain source voltage of 60 V enabling high-voltage switching.
- The 4-pin SOT-223 surface-mount package is compact and suitable for PCBs.
- With a maximum power dissipation of 1.8 W, it handles moderate thermal loads efficiently.
- The device operates reliably across a temperature range from -55°C to 150°C.
- It features a low maximum drain-source resistance of 300 mΩ reducing conduction losses.
- The typical gate charge is 10 nC for efficient drive control.
- The MOSFET meets the AEC-Q101 automotive standard for semiconductor reliability.
Product Description
Infineon BSP170PH6327XTSA1 is a SIPMOS Series P-Channel MOSFET designed for surface-mount power switching applications in demanding automotive and industrial environments. It features a maximum continuous drain current of 1.9 A and a maximum drain source voltage of 60 V suitable for robust high-voltage switching tasks.
The device comes in a 4-pin SOT-223 package supporting surface mount PCB assembly. Its maximum power dissipation rating of 1.8 W allows efficient thermal management for moderate load conditions. The MOSFET has a low drain-source resistance of 300 mΩ which minimizes conduction losses enhancing overall circuit efficiency.
Designed for reliable operation in extreme temperatures, it functions from -55°C up to 150°C, complying with automotive-grade requirements including the AEC-Q101 standard. The typical gate charge of 10 nC facilitates efficient switching performance with low gate drive power requirements.
This MOSFET is suitable for various industrial use cases including load switching in automotive electronics, battery management systems, polarity protection in vehicle circuits, and in conjunction with driver ICs for DC-DC converters. The device's gate-to-source voltage must remain within ±20 V as per device specifications to avoid stress.
Supports up to 1.9 A continuous drain current. Maximum drain-source voltage rating is 60 V. SOT-223 surface-mount package with 4 pins for easy PCB mounting. Maximum power dissipation of 1.8 W to handle thermal loads. Operates reliably from -55°C to 150°C temperature range.
Low Rds(on) of 300 mΩ reduces conduction losses. Typical gate charge of 10 nC for efficient switching. Meets automotive AEC-Q101 standard for high reliability. Ideal for battery management, load switching, and DC-DC conversion circuits.
The Infineon BSP170PH6327XTSA1 MOSFET is a robust choice for designers requiring a compact, reliable, and efficient power semiconductor component in electronic and automotive systems.
Explore more high-quality MOSFETs and discrete semiconductor components in the Electronics & Electricals category on EnvMart for professional-grade industrial applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.9 A.
It features a maximum drain-source voltage rating of 60 V.
This MOSFET comes in a 4-pin SOT-223 surface-mount package.
The device operates reliably across a temperature range from -55°C to 150°C.
The maximum power dissipation rating is 1.8 W, allowing for efficient thermal management.
The typical gate charge is 10 nC, which facilitates efficient switching performance.
It has a maximum drain-source resistance of 300 mΩ, which reduces conduction losses.
This model meets the AEC-Q101 automotive standard for semiconductor reliability.
The dimensions are 6.5 mm in length, 3.5 mm in width, and 1.6 mm in height.
The maximum gate-source voltage must remain within -20 V to +20 V.
It is suitable for load switching in automotive electronics, battery management systems, and DC-DC converters.
This device is a P-Channel MOSFET, designed for enhancement mode operation.
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