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Infineon SIPMOS Type P-Channel MOSFET, 60 V Drain Source Voltage, 1.17 A Drain Current, Enhancement Mode BSP315PH6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.6mm |
| Length | 6.5mm |
| Model | BSP315PH6327XTSA1 |
| Width | 3.5mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.17A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 800mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.8W |
| Typical Gate Charge Qg @ Vgs | 5.2nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.97V |
Key Features
- This MOSFET features enhancement mode channel operation for improved switching performance.
- Supports a maximum power dissipation of 1.8 W enabling sustained low-power operation.
- Has a typical gate charge of 5.2 nC for efficient gate drive control.
- Maximum drain-source resistance is 800 milliohm to reduce conduction losses.
- Rated for operation from -55 °C up to 150 °C to withstand harsh environments.
- Complies with AEC-Q101 automotive standard for high reliability.
- Surface mount SOT-223 package ensuring compact PCB design and ease of assembly.
- Suitable for applications including battery management load switching and reverse-polarity protection.
Product Description
Infineon BSP315PH6327XTSA1 is a SIPMOS series P-channel enhancement-mode MOSFET designed for surface-mount power switching applications. It features a maximum drain-source voltage of 60 V and can continuously handle drain currents up to 1.17 A, making it ideal for low-power switching tasks in automotive and industrial environments.
This MOSFET comes in a compact 4-pin SOT-223 package optimized for surface mounting on printed circuit boards where space is constrained. It offers a maximum power dissipation rating of 1.8 W, enabling it to sustain reliable operation under typical load conditions.
The device exhibits a typical gate charge of 5.2 nC, which facilitates efficient gate drive and switching speed. The maximum on-resistance (Rds(on)) of 800 milliohms reduces conduction losses, enhancing the overall energy efficiency of circuits.
Operating temperature ranges from -55 °C to 150 °C allow usage in demanding environments; the MOSFET also holds AEC-Q101 qualification for automotive-grade stress tolerance and reliability.
Enhancement mode P-channel MOSFET architecture. 60 V drain-source voltage rating. 1.17 A continuous drain current capability. 1.8 W maximum power dissipation. 800 milliohm maximum drain-source resistance. 5.2 nC typical gate charge.
Operating temperature -55 °C to 150 °C. SOT-223 surface mount package with 4 pins. MEets AEC-Q101 automotive standard.
Common industrial and automotive applications include battery-management load switching, reverse-polarity protection in electronic circuits, high-side switching in DC/DC converters, and load disconnect functions in telematics modules. Its compact size and surface mounting capability suit space-constrained power-control boards. With reliable voltage, current, and thermal performance, it is well-suited for use in automotive electronics, telematics, industrial control systems, and low-power electrical switching setups.
Explore our broad range of semiconductor and MOSFET solutions at EnvMart for advanced electronic components optimized for durability, efficiency, and performance.
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Frequently Asked Questions
The maximum drain-source voltage of this model is 60 V.
It can continuously handle drain currents up to 1.17 A.
This MOSFET comes in a SOT-223 package and has 4 pins.
The maximum power dissipation rating is 1.8 W.
It has a typical gate charge of 5.2 nC.
The maximum drain-source resistance is 800 milliohm.
The operating temperature range is from -55 °C to 150 °C.
It complies with the AEC-Q101 automotive standard.
This model features an enhancement mode P-channel architecture.
It is suitable for applications such as battery management, load switching, and reverse-polarity protection.
The maximum gate-source voltage rating is -20 V to +20 V.
The dimensions are 6.5 mm in length, 3.5 mm in width, and 1.6 mm in height.
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