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Infineon OptiMOS 3 N-Channel MOSFET, 25 A Continuous Drain Current, 250 V Drain Source Voltage, 136 W IPB600N25N3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.57mm |
| Length | 10.31mm |
| Model | IPB600N25N3GATMA1 |
| Width | 9.45mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 25A |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 60mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 136W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Key Features
- High voltage rating of 250 V enables wide application use.
- Continuous drain current up to 25 A ensures robust power handling.
- Low on-resistance of 60mΩ reduces conduction losses.
- Power dissipation capacity of 136 W supports high thermal loads.
- Enhanced switching performance with typical gate charge of 22nC.
- Operates reliably within temperature range from -55°C to 175°C.
- Surface-mount TO-263 package facilitates easy soldering and heat dissipation.
- Gate-source voltage tolerance of -20 V to +20 V allows flexible gate drive designs.
Product Description
The Infineon IPB600N25N3GATMA1 is an OptiMOS 3 series N-channel MOSFET designed for efficient power switching applications. It is rated for a maximum continuous drain current of 25 A and a drain-to-source voltage of 250 V, making it suitable for demanding electronic systems requiring high voltage and current handling.
This device features a surface-mount TO-263 package which offers a compact footprint while providing effective thermal management through its wide thermal pad, essential for dissipating power up to 136 W under sustained use.
Its low maximum drain-source resistance of 60mΩ helps minimize conduction losses, enhancing overall efficiency in power conversion and switching. The MOSFET supports a wide temperature span, operating reliably from -55°C to 175°C, suitable for harsh environments and industrial applications.
The typical gate charge of 22nC facilitates predictable switching performance, allowing precise gate driver design for optimized switching losses. The gate-to-source voltage tolerance of ±20 V accommodates a variety of gate drive voltages.
Primary use cases include high-voltage SMPS primary switching stages, industrial motor-drive inverter legs, DC-DC converters in telecommunications power systems, and battery management and charger topologies. It is ideal for general-purpose power switching on surface-mounted boards in industrial, commercial, and electronic applications.
High voltage rating of 250 V enables wide application use. Continuous drain current up to 25 A ensures robust power handling. Low on-resistance of 60mΩ reduces conduction losses. Power dissipation capacity of 136 W supports high thermal loads.
Enhanced switching performance with typical gate charge of 22nC. Operates reliably within temperature range from -55°C to 175°C. Surface-mount TO-263 package facilitates easy soldering and heat dissipation. Gate-source voltage tolerance of -20 V to +20 V allows flexible gate drive designs.
Compact dimensions with length 10.31mm, width 9.45mm, and height 4.57mm. Explore EnvMart for a comprehensive range of power MOSFETs and other semiconductor components from leading manufacturers like Infineon.
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Frequently Asked Questions
The maximum continuous drain current for this model is 25 A.
It has a maximum drain-to-source voltage rating of 250 V.
The power dissipation capacity is 136 W, which supports high thermal loads.
The maximum drain-source resistance is 60 mΩ, which helps reduce conduction losses.
The typical gate charge is 22 nC, facilitating predictable switching performance.
It operates reliably within a temperature range from -55°C to 175°C.
This model uses a surface-mount TO-263 package, which aids in soldering and heat dissipation.
The maximum gate-source voltage tolerance is ±20 V, allowing for flexible gate drive designs.
The dimensions are 10.31 mm in length, 9.45 mm in width, and 4.57 mm in height.
It is suitable for high-voltage SMPS primary switching stages, industrial motor-drive inverters, and DC-DC converters.
This device has a pin count of 3.
This model belongs to the OptiMOS 3 series.
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