Infineon OptiMOS 3 N-Channel MOSFET, 100 A Continuous Drain Current, 60 V Maximum Drain Source Voltage IPD031N06L3GATMA1

Infineon IPD031N06L3GATMA1 OptiMOS 3 N-Channel MOSFET is a high-performance power semiconductor device housed in a compact 3-pin TO-252 surface mount package. It supports continuous drain currents up to 100 A and voltage ratings of 60 V, making it well-suited for demanding electronic circuits that require efficient power switching and thermal performance.

This enhancement mode MOSFET features an exceptionally low on-resistance of 5.2 milliohms, reducing conduction losses significantly in power conversion applications such as switching mode power supplies (SMPS), DC/DC converters, and other industrial power management systems. The gate charge is low at 59 nC, enabling fast switching speeds with minimal energy loss.

The device is rated for high power dissipation of 167 W and can operate reliably over a wide temperature range from -55°C to 175°C, making it suitable for harsh industrial and automotive environments despite not holding specific automotive standard certification. The maximum gate-source voltage of ±20 V offers protection against voltage spikes during switching operations.

Physically, the TO-252 package dimensions are 6.73 mm in length, 6.22 mm in width, and 2.413 mm in height. The package design supports surface mount technology for compact PCB layouts and automated assembly processes. The MOSFET is lead-free and follows JEDEC qualification procedures for quality consistency.

Infineon's OptiMOS 3 series addresses the need for energy efficiency, reduced power loss, and improved performance in contemporary electronic devices such as computer power supplies, telecommunications infrastructure, industrial equipment, and consumer electronics requiring reliable power switching elements.

Operates with a channel mode of enhancement type. Has a very low on-resistance of 5.2 milliohms ensuring efficient conduction. Capable of a maximum power dissipation of 167 watts for high power handling. Designed for operating temperatures from -55°C to a maximum of 175°C.

Typical gate charge of 59 nanocoulombs facilitates fast switching. Maximum gate-source voltage rating is -20 V to +20 V for robust operation. Compact TO-252 surface mount package with dimensions 6.73 mm length, 6.22 mm width, and 2.413 mm height.

Forward voltage drop of 0.9 volts supports efficient switching. Lead-free plating and compliance with JEDEC qualification for reliable manufacturing quality. Browse the Electronics & Electricals category at EnvMart for additional semiconductor devices and high-quality power components by Infineon and other reputable brands.