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Infineon OptiMOS 3 N-Channel MOSFET 100 A 60 V Enhancement 3-Pin TO-252 IPD034N06N3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.413mm |
| Length | 6.73mm |
| Model | IPD034N06N3GATMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 3.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 167W |
| Typical Gate Charge Qg @ Vgs | 98nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.9V |
| N-Channel MOSFET Transistor, 100 A, 60 V, 3-Pin DPAK Infineon IPD034N06N3 GBrand | Infineon |
Key Features
- Features OptiMOS 3 technology optimized for power density and efficiency.
- Enhancement mode N-channel MOSFET with low on-resistance of 3.4 mΩ.
- Operates reliably from -55°C to 175°C ambient temperature.
- 3-pin surface mount device suitable for DC/DC converters and power management.
- Typical gate charge of 98 nC provides fast switching capability.
- Maximum power dissipation of 167 W supports high performance applications.
- Widely used in industrial, computing, automotive, and energy efficient power systems.
Product Description
Infineon IPD034N06N3GATMA1 is a high-performance OptiMOS™ 3 N-Channel MOSFET designed for demanding power applications requiring both efficiency and power density. This device supports a maximum continuous drain current of 100 A and a drain-source voltage of 60 V, packaged in a compact TO-252 surface mount form factor with 3 pins.
The OptiMOS 3 series benefits from Infineon's advanced technology, delivering very low on-resistance (3.4 mΩ) and a typical gate charge of 98 nC at Vgs, enabling fast switching and reduced switching losses, ideal for switching power supplies (SMPS), DC/DC converters, and motor control applications.
Engineered for industrial and automotive environments, this MOSFET operates reliably across a wide temperature range from -55°C to 175°C, providing durability and stability under harsh operating conditions. It is Pb-free plated and complies with JEDEC standards for quality assurance.
This product is ideal for use in power management circuits where efficient energy regulation is crucial, including computing systems, renewable energy inverters, and high-density power converters, offering designers flexibility and enhanced system performance.
Key features include surface mount package for easy PCB assembly, enhancement channel mode for reliable switching, and a forward voltage rating of 0.9 V. The device is not automotive standard certified but meets stringent industrial requirements.
OptiMOS 3 technology optimized for high performance and efficiency. Maximum continuous drain current of 100 A and drain-source voltage of 60 V. Low Rds(on) of 3.4 mΩ minimizing conduction losses. Typical gate charge of 98 nC ensures fast switching response.
Wide operating temperature range from -55°C to 175°C. Compact TO-252 surface mount package with 3 pins. Suitable for power supply, computing, automotive, and industrial applications. Explore the Infineon product catalog or browse MOSFETs to find compatible components for your next electronic design project on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
It supports a maximum drain-source voltage of 60 V.
The on-resistance (Rds(on)) of this MOSFET is 3.4 mΩ, which minimizes conduction losses.
The typical gate charge at Vgs is 98 nC, enabling fast switching capabilities.
This device operates reliably across a wide temperature range from -55°C to 175°C.
It is packaged in a compact TO-252 surface mount format with 3 pins.
The maximum power dissipation for this MOSFET is 167 W.
The forward voltage rating is 0.9 V.
This model features an enhancement mode N-channel.
It is suitable for use in power management circuits, including DC/DC converters and motor control applications.
The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.413 mm in height.
The maximum gate-source voltage is -20 V to +20 V.
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