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Infineon OptiMOS 3 N-Channel MOSFET, 50 A Continuous Drain Current, 60 V Drain Source Voltage, 8-Pin BSC067N06LS3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.49mm |
| Model | BSC067N06LS3GATMA1 |
| Width | 6.35mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 12.1mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 69W |
| Typical Gate Charge Qg @ Vgs | 23nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.9V |
Key Features
- This enhancement mode MOSFET features low on-resistance of 12.1 milliohms for efficient power handling.
- Maximum power dissipation is rated at 69 W, enabling use in high-performance applications.
- Designed with a maximum gate source voltage of ±20 V for robust switching control.
- Compact dimensions of 6.35 mm width, 5.49 mm length, and 1.1 mm height ensure compatibility with space-limited PCB layouts.
- Operating temperature range spans from -55°C to 150°C, suitable for industrial environments.
- The device is surface-mount mounted, optimizing assembly in automated manufacturing.
- Typical gate charge is 23 nC at Vgs, providing fast switching characteristics suited for SMPS and DC/DC converters.
- Package type TDSON enhances thermal performance and reliability in demanding electronic circuits.
Product Description
Infineon BSC067N06LS3GATMA1 OptiMOS 3 N-Channel MOSFET is designed for high-efficiency power switching and voltage regulation in electronic devices. This transistor supports a maximum continuous drain current of 50 A and a maximum drain-source voltage of 60 V, making it ideal for power management and switching power supply applications.
The enhancement mode channel offers excellent switching performance with a low on-resistance of 12.1 mΩ, which reduces power loss and heat generation. Its maximum power dissipation rating of 69 W ensures reliability under demanding load conditions.
This MOSFET is housed in an 8-pin TDSON surface-mount package that offers compact size and efficient thermal dissipation for high-density circuit designs.
Operating temperature ranges from -55°C to 150°C, suitable for industrial, commercial, and automotive electronic applications. The device supports a gate source voltage range of -20 V to +20 V and a typical gate charge of 23 nC for fast switching in DC/DC converters and SMPS circuits.
Infineon OptiMOS 3 series is known for its optimized technology that enhances energy efficiency and power density in computing and power electronics systems, complying with JEDEC standards.
This MOSFET provides very low on-resistance and excellent gate charge figure of merit (FOM) for efficient operation. The surface mount TDSON package facilitates easy integration on printed circuit boards for mass production.
The device is ROHS-compliant with lead-free plating to meet international environmental standards. Typical applications include power management in consumer electronics, industrial equipment, and automotive electronics requiring reliable and efficient switching.
Designed to meet next-generation voltage regulation demands, this MOSFET is a strong choice for high-performance power electronic designs. Explore other advanced semiconductor components in the Infineon OptiMOS 3 range and related power management devices at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 50 A.
This MOSFET has a maximum drain-source voltage of 60 V.
The on-resistance for this model is rated at 12.1 milliohms.
The typical gate charge at Vgs for this MOSFET is 23 nC.
The TDSON package dimensions are 6.35 mm in width, 5.49 mm in length, and 1.1 mm in height.
The operating temperature range for this model spans from -55°C to 150°C.
The maximum power dissipation rating is 69 W.
This model uses surface mount technology for its installation.
The maximum gate source voltage for this device is ±20 V.
This MOSFET is suitable for power management in consumer electronics, industrial equipment, and automotive electronics.
This model features 8 pins.
Yes, this device is ROHS-compliant with lead-free plating to meet international environmental standards.
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